6inch SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF

6inch SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers

Description of SiC Wafer:

The 6-inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high-temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices, especially the manufacturing of Insulated Gate Bipolar Transistors (IGBT). The design of IGBT often involves P-N junctions, where P-type SiC can be advantageous for controlling the behavior of the devices.

The Character of SiC Wafer:

1. Radiation Resistance:
Silicon carbide is highly resistant to radiation damage, making 4H/6H-P SiC wafers ideal for use in space and nuclear applications where radiation exposure is significant.

2. Wide Bandgap:
4H-SiC: The bandgap is approximately 3.26 eV.
6H-SiC: The bandgap is slightly lower, at about 3.0 eV.
These wide bandgaps allow SiC wafers to operate at higher temperatures and voltages compared to silicon-based materials, making them ideal for power electronics and extreme environmental conditions.
3. High Breakdown Electric Field:
SiC wafers have a much higher breakdown electric field (around 10 times that of silicon). This allows for the design of smaller, more efficient power devices that can handle high voltages.
4. High Thermal Conductivity:
SiC has excellent thermal conductivity (around 3-4 times higher than silicon), allowing devices made from these wafers to operate at high power without overheating. This makes them ideal for high-power applications where heat dissipation is critical.
5. High Electron Mobility:
4H-SiC has a higher electron mobility (~950 cm²/Vs) compared to 6H-SiC (~400 cm²/Vs), which means 4H-SiC is more suitable for high-frequency applications.
This high electron mobility allows for faster switching speeds in electronic devices, making 4H-SiC preferable for RF and microwave applications.
6. Temperature Stability:
SiC wafers can operate at temperatures well above 300°C, much higher than silicon-based devices, which are typically limited to 150°C. This makes them highly desirable for use in harsh environments, such as automotive, aerospace, and industrial systems.
7. High Mechanical Strength:
SiC wafers are mechanically robust, with excellent hardness and resistance to mechanical stress. They are suitable for use in environments where physical durability is essential.

Form of SiC Wafer:

Application of SiC Wafer:

Power Electronics:

Used in diodes, MOSFETs, and IGBTs for high-voltage, high-temperature applications like electric vehicles, power grids, and renewable energy systems.
RF and Microwave Devices:

Ideal for high-frequency devices such as RF amplifiers and radar systems.
LEDs and Lasers:

SiC is also used as a substrate material for the production of GaN-based LEDs and lasers.
Automotive Electronics:

Used in electric vehicle powertrain components and charging systems.
Aerospace and Military:

Due to their radiation hardness and thermal stability, SiC wafers are used in satellites, military radars, and other defense systems.
Industrial Applications:

Employed in industrial power supplies, motor drives, and other high-power, high-efficiency electronic systems.

Application Picture Of SiC Wafer:

Customization:

Customization of Silicon Carbide (SiC) wafers is essential to meet the specific needs of various advanced electronic, industrial, and scientific applications. We can offer a range of customizable parameters to ensure the wafers are optimized for particular device requirements. Below are the key aspects of SiC wafer customization:Crystal Orientation; Diameter and Thickness; Doping Type and Concentration; Surface Polishing and Finish; Resistivity; Epitaxial Layer;Orientation Flats and Notches;SiC-on-Si and Other Substrate Combinations.

Packing and Shipping:

FAQ:

1.Q: What is 4H and 6H SiC?
   A: 4H-SiC and 6H-SiC represent hexagonal crystal structures, with "H" indicating hexagonal symmetry and the numbers 4 and 6 the layers in their unit cells. This structural variation affects the material's electronic band structure, which is a key determinant of a semiconductor device's performance.

2.Q: What is P type substrate?
 A: p-type material is a semiconductor that has a positive charge carrier, which is known as a hole. The hole is created by introducing an impurity into the semiconductor material, which has one less valence electron than the semiconductor atoms.

Product Recommend:

1.SiC Silicon Carbide Wafer 4H-N Type For MOS Device 2inch Dia50.6mm

2.SiC Substrate Silicon Carbide Subatrte 3C-N 5×5 10×10mm