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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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Silicon Carbide Wafer

Manufacturer of a wide range of products which include Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp,1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp,8inch 200mm Polishing Si...

Quality Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp for sale

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Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp

  1. MOQ: 5pcs

  2. Price: By case

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Payment Terms T/T, Western Union, paypal
Supply Ability 50pcs/month
Delivery Time in 30days
Packaging Details single wafer container in cleaning room
layer GaN template
layer thickness 1-5um
Melt point (°C) 1725°C
Conductivity Semi-insulating, Fe-doped,Mg-doped
Electrical Resistivity >1E6 Ohm-cm
Density 5.95 g/cm3
Brand Name ZMKJ
Model Number Beta Coefficient-Ga2O3
Place of Origin China

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Quality 1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp for sale

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1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp

  1. MOQ: 5pcs

  2. Price: By case

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Payment Terms T/T, Western Union, paypal
Supply Ability 50pcs/month
Delivery Time in 30days
Packaging Details single wafer container in cleaning room
layer GaN template
layer thickness 1-5um
Melt point (°C) 1725°C
Conductivity Semi-insulating, Fe-doped,Mg-doped
Electrical Resistivity >1E6 Ohm-cm
Density 5.95 g/cm3
Brand Name ZMKJ
Model Number Beta Coefficient-Ga2O3
Place of Origin China

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Quality 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor for sale

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8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

  1. MOQ: 1pcs

  2. Price: By case

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Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1-50pcs/month
Delivery Time 1-6weeks
Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 4H-N type
Grade Dummy /Production grade
Thicnkss 0.35mm 0.5mm
Suraface double side polished
Application device maker polishing test
Diameter 200±0.5mm
Brand Name ZMKJ
Model Number 8inch sic wafers 4h-n
Place of Origin CHINA
Certification ROHS

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Quality Silicon Carbide (SiC) 10×10 mm Substrate / Small Square Chip – High-Performance SiC for sale

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Silicon Carbide (SiC) 10×10 mm Substrate / Small Square Chip – High-Performance SiC

  1. MOQ: 1

  2. Price: By case

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Payment Terms T/T
Supply Ability By case
Delivery Time 2-4 weeks
Packaging Details custom cartons
Material SiC
Dimensions 10mm × 10mm square
Thickness 330–500 μm (customizable)
Surface Finish Single/double-side polished, epi-ready
Brand Name ZMSH
Place of Origin China

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Quality High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N for sale

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High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N

  1. MOQ: 5

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 100000
Material Silicon Carbide
Diameter 2inch 3inch 4inch 6inch 8inch
Grade Production/ Research/ Dummy
Thickness 350um 500um
Conductivity High/Low Conductivity
Orientation On-Axis/Off-Axis
Resistivity High/Low Resistivity
Bow/Warp ≤50um
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China

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Quality High Resistivity Silicon Carbide Wafer  Semi Insulating For Low Particle Applications for sale

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High Resistivity Silicon Carbide Wafer Semi Insulating For Low Particle Applications

  1. MOQ: 5

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 100000
Packaging Details single wafer container
Grade Production/ Research/ Dummy
Conductivity High/Low Conductivity
Resistivity High/Low Resistivity
Thickness 50-500um
Particle Free/Low Particle
TTV ≤2um
Surface Roughness ≤1.2nm
Orientation On-Axis/Off-Axis
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China

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Quality Semi Insulating Silicon Carbide Wafer SiC Substrate Orientation 0001 Bow/Warp ≤50um for sale

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Semi Insulating Silicon Carbide Wafer SiC Substrate Orientation 0001 Bow/Warp ≤50um

  1. MOQ: 1

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 10000
Resistivity High Resistivity
Diameter 2inch 3inch 4inch 6inch 8inch
Flatness Lambda/10
Type 4H-Semi-insulting/ 6H-Semi-insulting
Conductivity High Conductivity
Particle Free/Low Particle
Surface Roughness ≤0.2nm
Impurity Free/Low Impurity
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China
Certification ROHS

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Quality 4H-N/Semi Type SiC Ingot And Substrate Industrial Dummy 2inch 3inch 4inch 6inch for sale

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4H-N/Semi Type SiC Ingot And Substrate Industrial Dummy 2inch 3inch 4inch 6inch

  1. MOQ: 1pcs

  2. Price: By case

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Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1-50pcs/month
Delivery Time 1-6weeks
Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 4H-N type
Grade Dummy /Production grade
Thicnkss 6-15mm
Suraface LP/as-cut
Application device maker polishing test
Diameter 150.65±0.3mm
Brand Name ZMKJ
Model Number 6inch SiC ingots
Place of Origin CHINA

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Quality High Purity Semi-Insulating HPSI SiC Powder/99.9999% Purity Crystal Growth for sale

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High Purity Semi-Insulating HPSI SiC Powder/99.9999% Purity Crystal Growth

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Payment Terms T/T
Purity ≥ 99.9999% (6N)
Particle Size 0.5 µm - 10 µm
Bandgap Width ~3.26 eV
Mohs Hardness 9.5
Brand Name ZMSH
Place of Origin China

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Quality 4H/6H Semi-Insulating Silicon Carbide Wafer For Production/Research/Dummy Grade for sale

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4H/6H Semi-Insulating Silicon Carbide Wafer For Production/Research/Dummy Grade

  1. MOQ: 5

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 100000
Surface Finish Single/Double Side Polished
TTV ≤2um
Particle Free/Low Particle
Surface Roughness ≤1.2nm
Flatness Lambda/10
Orientation On-Axis/Off-Axis
Material Silicon Carbide
Type 4H-N/ 6H-N/ 4H-Semi-insulting/ 6H-Semi-insulting
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.sapphire-substrate.com/

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