wide bandgap semi insulating sic substarte

{"cid":"91191224","title":"6H-N Semi-insulating SiC Substarte \/ Wafer For MOSFETs\u3001JFETs BJTs High Resistivity Wide Bandgap","imgUrl":"https:\/\/img.ismap.com\/nimg\/00\/aa\/721ddc55645b7231895de8f4be18-200x200-1.jpg","attrs":{"Brand Name":"ZMSH","Model Number":"4H Semi-insulating SiC substarte\/wafer","Minimum Order Quantity":"1","Delivery Time":"2-4 weeks","Place of Origin":"China","Payment Terms":"T\/T","Grade":"Production Grade Research Grade Dummy Grade","Diameter":"100.0 mm +\/- 0.5 mm","Thickness":"500 um +\/- 25 um (semi-insulating type), 350 um +\/- 25 um (N type)","Wafer Orientation":"On axis: <0001> +\/- 0.5 deg for 4H-SI Off axis: 4.0 deg toward <11-20> +\/-0.5 deg for 4H-N","Electrical Resistivity (Ohm-cm)":"4H-N 0.015~0.028 4H-SI>1E5","Doping Concentration":"N-type: ~ 1E18\/cm3 SI-type (V-doped): ~ 5E18\/cm3","Primary Flat":"32.5 mm +\/- 2.0 mm","Secondary Flat Length":"18.0 mm +\/- 2.0 mm","Secondary Flat Orientation":"Silicon face up: 90 deg CW from Primary flat +\/- 5.0 deg"}}

{"cid":"91184473","title":"6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P Type N Type Single Polish Double Polish Production Grade","imgUrl":"https:\/\/img.ismap.com\/nimg\/b5\/49\/a525340e15a317b056a31031d32e-200x200-1.jpg","attrs":{"Price":"by case","Brand Name":"ZMSH","Model Number":"4H SiC","Minimum Order Quantity":"10pc","Delivery Time":"in 30days","Certification":"rohs","Place of Origin":"CHINA","Payment Terms":"T\/T","Supply Ability":"1000pc\/month","Packaging Details":"customzied plastic box","Material":"Silicon Carbide","Size":"6Inch","Dia":"150 mm \u00b1 0.22 mm","Resistivity":"\u22651E8ohm\u00b7cm","Warp":"\u226435\u03bcm","Parameter":"Semi, P, N Type","Ttv":"\u22645\u03bcm","Roughness":"Ra\u22640.2nm","Surface Finish":"Single or double side polished","Applications":"Power electronics, Optoelectronics","Customized":"ok"}}