irf1404zpbf

{"cid":"91202123","title":"IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET","imgUrl":"https:\/\/img.ismap.com\/nimg\/f3\/77\/c46d2b44d29c4034f284274e2a7e-200x200-1.jpg","attrs":{"Price":"Negotiated","Brand Name":"Infineon Technologies\/International Rectifier IOR","Model Number":"IRF1404ZPBF","Minimum Order Quantity":"10pieces","Delivery Time":"2-15days","Certification":"ROHS","Place of Origin":"CHINA","Payment Terms":"T\/T, Western Union","Supply Ability":"500000pcs","Packaging Details":"Standard package","Family":"Discrete Semiconductor Products","Category":"Electronic Components-MOSFET (Metal Oxide)","Series":"HEXFET MOSFET (Metal Oxide)","Base part number":"IRF1404","Details":"N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB","Type":"Transistors - FETs, MOSFETs - Single","Description":"MOSFET N-CH 40V 180A TO220AB","Package":"TO220","Mounting Type":"Through hole","Stock":"In Stock"}}

{"cid":"91219332","title":"IRF1404ZPBF","imgUrl":"https:\/\/img.ismap.com\/nimg\/44\/a4\/c5a7c772db29748e1201856bb040-200x200-1.jpg","attrs":{"Transistor Polarity :":"N-Channel","Technology :":"Si","Product Category :":"MOSFET","Mounting Style :":"Through Hole","Minimum Operating Temperature :":"- 55 C","Package \/ Case :":"TO-220-3","Maximum Operating Temperature :":"+ 175 C","Vds - Drain-Source Breakdown Voltage :":"40 V","Packaging :":"Tube","Vgs th - Gate-Source Threshold Voltage :":"4 V","Id - Continuous Drain Current :":"180 A","Rds On - Drain-Source Resistance :":"2.7 mOhms","Number of Channels :":"1 Channel","Vgs - Gate-Source Voltage :":"20 V","Qg - Gate Charge :":"100 nC","Manufacturer :":"Infineon Technologies","Description":"MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg"}}

{"cid":"91218829","title":"New And Original TO-220 N-Channel 40V 180A IRF1404ZPBF IRF1404","imgUrl":"https:\/\/img.ismap.com\/nimg\/a2\/e1\/0e5a23358b3e09eca78d4d1da2af-200x200-1.jpg","attrs":{"Price":"$0.45\/pieces 10-99 pieces","Brand Name":"original","Model Number":"IRF1404ZPBF","Minimum Order Quantity":"10 pieces","Type":"IC CHIP, Field-Effect Transistor, IGBT Transistor","Operating Temperature":"\/","Series":"\/","Mounting Type":"\/","Description":"\/","Place of Origin":"Guangdong, China","D\/C":"22+","Package Type":"Throught Hole","Application":"irf transistor","Supplier Type":"Other","Cross Reference":"NEW","Media Available":"Other","Brand":"\/","Current - Collector (Ic) (Max)":"\/","Voltage - Collector Emitter Breakdown (Max)":"\/","Vce Saturation (Max) @ Ib, Ic":"\/","Current - Collector Cutoff (Max)":"\/","DC Current Gain (hFE) (Min) @ Ic, Vce":"\/","Power - Max":"\/","Frequency - Transition":"\/","Package \/ Case":"\/","Resistor - Base (R1)":"\/","Resistor - Emitter Base (R2)":"\/","FET Type":"\/","FET Feature":"Standard","Drain to Source Voltage (Vdss)":"\/","Current - Continuous Drain (Id) @ 25\u00b0C":"\/","Rds On (Max) @ Id, Vgs":"\/","Vgs(th) (Max) @ Id":"\/","Gate Charge (Qg) (Max) @ Vgs":"\/","Input Capacitance (Ciss) (Max) @ Vds":"\/","Frequency":"\/","Current Rating (Amps)":"\/","Noise Figure":"\/","Power - Output":"\/","Voltage - Rated":"\/","Drive Voltage (Max Rds On, Min Rds On)":"\/","Vgs (Max)":"\/","IGBT Type":"\/","Configuration":"\/","Vce(on) (Max) @ Vge, Ic":",","Input Capacitance (Cies) @ Vce":",","Input":",","NTC Thermistor":",","Voltage - Breakdown (V(BR)GSS)":",","Current - Drain (Idss) @ Vds (Vgs=0)":",","Current Drain (Id) - Max":",","Voltage - Cutoff (VGS off) @ Id":"\/","Resistance - RDS(On)":",","Voltage":",","Voltage - Output":",","Voltage - Offset (Vt)":",","Current - Gate to Anode Leakage (Igao)":",","Current - Valley (Iv)":",","Current - Peak":",","Applications":",","Transistor Type":"mrf150 rf power transistor","Packaging Details":"Anti-static packaging","Port":"shenzhen","Supply Ability":"1000 Piece\/Pieces per Week"}}