SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4weeks |
| Substrate Material | Silicon Carbide On Silicon Compound Wafer |
| Front Surface | CMP Polished, Ra < 0.5 Nm (single Side Polished, SSP) |
| Secondary Flat Length | 18.0 +/- 2.0 Mm |
| Type | Semi-type |
| Primary Flat Length | 32.5 +/- 2.5 Mm |
| Diameter | 100 Mm +/- 0.5 Mm |
| Carbon Content | 0.5 Ppm |
| Secondary Flat Orientation: | 90 Deg From Primary Flat |
| Brand Name | ZMSH |
| Model Number | |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4weeks |
| Substrate Material | Silicon Carbide On Silicon Compound Wafer | Front Surface | CMP Polished, Ra < 0.5 Nm (single Side Polished, SSP) |
| Secondary Flat Length | 18.0 +/- 2.0 Mm | Type | Semi-type |
| Primary Flat Length | 32.5 +/- 2.5 Mm | Diameter | 100 Mm +/- 0.5 Mm |
| Carbon Content | 0.5 Ppm | Secondary Flat Orientation: | 90 Deg From Primary Flat |
| Brand Name | ZMSH | Model Number | |
| Place of Origin | China | ||
| High Light | LEDs SiC on Si Composite substrates ，SiC On Si Composite Substrates | ||
Semi-insulating SiC On Si Composite Substrates 4H Exhibit High Resistivity LED
A semi-insulating silicon carbide (SiC) on silicon compound wafer is a specialized type of wafer that combines the properties of silicon carbide and silicon materials. The wafer consists of a layer of semi-insulating silicon carbide on top of a silicon substrate. The term "semi-insulating" indicates that the material has electrical properties that are not purely conductive or purely insulating, but somewhere in between.
Character of SiC On Si Composite Substrates:
1. High Resistivity: Semi-insulating SiC on Si wafers exhibit high resistivity, which means they have low electrical conductivity compared to regular conductive materials.
2. Low Leakage: Due to their semi-insulating nature, these wafers have low leakage currents, making them suitable for applications requiring minimal electrical leakage.
3. High Breakdown Voltage: They typically have a high breakdown voltage, enabling them to withstand high electric fields without breakdown.
| Item | Specification |
| Diameter | 150 ± 0.2 mm |
| SiC Polytype | 4H |
| SiC Resistivity | ≥1E8 Ω·cm |
| Transfer SiC layer Thickness | ≥0.1 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) |
| Front roughness | Ra ≤ 0.2 nm (5 μm × 5 μm) |
| Si Orientation | <111>/<100>/<110> |
| Si Type | P/N |
| Flat/Notch | Flat/Notch |
| Edge Chip, Scratch, Crack (visual inspection) | None |
| TTV | ≤5 μm |
| Thickness | 500/625/675 ± 25 μm |
1. High-Frequency Devices: Semi-insulating SiC on Si compound wafers are commonly used in high-frequency devices such as RF transistors, amplifiers, and microwave systems.
2. Power Electronics: They find applications in power electronic devices where high breakdown voltage and low electrical losses are crucial for efficient power conversion.
3. Sensors: These wafers are utilized in sensor technologies where high resistivity and low leakage characteristics are required for accurate sensing and measurement.
4. Optoelectronics: In optoelectronic devices like photodetectors and LEDs, semi-insulating SiC on Si wafers can provide improved performance due to their unique electrical properties.
Applications Picture of SiC On Si Composite Substrates:
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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