SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T, Western Union |
| Supply Ability | 500pcs |
| Delivery Time | 2weeks |
| Packaging Details | single wafer container package in 100-grade cleaning room |
| Material | InP crystal |
| growth method | VFG |
| SIZE | 2inch/3inch/4 INCH |
| Thickness | 350-650um |
| application | LED/LD Device |
| surface | ssp/dsp |
| package | single wafer container |
| doped | S/Zn/Fe or un-doped |
| TTV | <10um |
| BOW | <10UM |
| Brand Name | zmkj |
| Model Number | 2 inch Inp wafers |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 500pcs |
| Delivery Time | 2weeks | Packaging Details | single wafer container package in 100-grade cleaning room |
| Material | InP crystal | growth method | VFG |
| SIZE | 2inch/3inch/4 INCH | Thickness | 350-650um |
| application | LED/LD Device | surface | ssp/dsp |
| package | single wafer container | doped | S/Zn/Fe or un-doped |
| TTV | <10um | BOW | <10UM |
| Brand Name | zmkj | Model Number | 2 inch Inp wafers |
| Place of Origin | CHINA | ||
| High Light | Dummy Prime Semiconductor Substrate ，InP Crystal Semiconductor Substrate ，SSP Semiconductor Substrate | ||
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +
growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.
The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.
The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical
modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.
Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing
Applications:
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
2inch S-C-N/S doped InP WAFERS
2inch S-C-N/Fe+ doped InP WAFERS
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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