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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

  1. China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
  2. China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
  3. China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

  1. MOQ: Negotiation
  2. Price: Negotiated
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Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Delivery Time 1 - 2 Weeks
Packaging Details Boxed
Product name N Channel Mosfet Power
Model AP3N10BI
Marking MA4
Pack SOT23
VDSDrain-Source Voltage 100V
VGSGate-Sou rce Voltage ±20A
Brand Name Hua Xuan Yang
Model Number AP3N10BI
Certification RoHS、SGS
Place of Origin ShenZhen China

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  1. Product Details
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Product Specification

Payment Terms L/C T/T Western Union Supply Ability 18,000,000PCS / Per Day
Delivery Time 1 - 2 Weeks Packaging Details Boxed
Product name N Channel Mosfet Power Model AP3N10BI
Marking MA4 Pack SOT23
VDSDrain-Source Voltage 100V VGSGate-Sou rce Voltage ±20A
Brand Name Hua Xuan Yang Model Number AP3N10BI
Certification RoHS、SGS Place of Origin ShenZhen China
High Light n channel mosfet transistorhigh voltage transistor

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

 

N Channel Mosfet Power Working and Characteristics

 

The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.

 

N Channel Mosfet Power Features

 

 

VDS= 100V I D=2.8 A

 

 

RDS(ON)< 320mΩ @ VGS=10V

 

N Channel Mosfet Power Application

 

Battery protection

Uninterruptible power supply

 

Package Marking and Ordering Information

 

Product ID Pack Marking Qty(PCS)
AP3N10BI SOT23 MA4 3000

 

Absolute Maximum Ratings (TC=25 unless otherwise specified)

 

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Sou rce Voltage ±20 V
ID@TA=25℃ Continuous Drain Current, V GS @ 10V 1 2.8 A
ID@TA=70℃ Continuous Drain Current, V GS @ 10V 1 1 A
IDM Pulsed Drain Current2 5 A
PD@TA=25 ℃ Total Power Dissipation3 1 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
RθJA Thermal Resistance Junction-ambient 1 125 ℃/W
RθJC Thermal Resistance Junction-Case 1 80 ℃/W

 

Electrical Characteristics (TJ=25 , unless otherwise noted)

 

 

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.067 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=1A --- 260 310

 

VGS=4.5V , I D=0.5A --- 270 320
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.0 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient   --- -4.2 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6  
Qg Total Gate Charge (10V)   --- 9.7 13.6  
Qgs Gate-Source Charge --- 1.6 2.2
Qgd Gate-Drain Charge --- 1.7 2.4
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

--- 1.6 3.2

 

ns

Tr        
Td(off) Turn-Off Delay Time --- 13.6 27
Tf Fall Time --- 19 38
Ciss Input Capacitance   --- 508 711  
Coss Output Capacitance --- 29 41
Crss Reverse Transfer Capacitance --- 16.4 23
IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A
ISM Pulsed Source Current 2,4 --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , --- 14 --- nS
Qrr Reverse Recovery Charge --- 9.3 --- nC
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.067 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=1A --- 260 310

 

VGS=4.5V , I D=0.5A --- 270 320
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.0 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient   --- -4.2 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6  
Qg Total Gate Charge (10V)   --- 9.7 13.6  
Qgs Gate-Source Charge --- 1.6 2.2
Qgd Gate-Drain Charge --- 1.7 2.4
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

--- 1.6 3.2

 

ns

Tr        
Td(off) Turn-Off Delay Time --- 13.6 27
Tf Fall Time --- 19 38
Ciss Input Capacitance   --- 508 711  
Coss Output Capacitance --- 29 41
Crss Reverse Transfer Capacitance --- 16.4 23
IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A
ISM Pulsed Source Current 2,4 --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , --- 14 --- nS
Qrr Reverse Recovery Charge --- 9.3 --- nC

 

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%

3.The power dissipation is limited by 150 ℃ junction temperature

 

4 .The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.

 

 

Symbol

Dimensions in Millimeters
MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
θ

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5, In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2008

  • Total Annual:

    8000000-10000000

  • Employee Number:

    150~200

  • Ecer Certification:

    Active Member

Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...

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  • Shenzhen Hua Xuan Yang Electronics Co.,Ltd
  • Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
  • https://www.mosfet-powertransistor.com/

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