MT29F4G08ABADAH4-IT:D TR IC FLASH 4GBIT PARALLEL 63VFBGA Micron Technology Inc.

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	4Gbit
Memory Organization	512M x 8
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	-
Access Time	-
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	63-VFBGA
Supplier Device Package	63-VFBGA (9x11)
Brand Name	Micron Technology Inc.
Model Number	MT29F4G08ABADAH4-IT:D TR

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Product Details
Company Details

Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NAND	Memory Size	4Gbit
Memory Organization	512M x 8	Memory Interface	Parallel
Clock Frequency	-	Write Cycle Time - Word, Page	-
Access Time	-	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	63-VFBGA	Supplier Device Package	63-VFBGA (9x11)
Brand Name	Micron Technology Inc.	Model Number	MT29F4G08ABADAH4-IT:D TR

Product Details

General Description

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densi ties with no board redesign.
A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.
This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
See Internal ECC and Spare Area Mapping for ECC for more information.

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
• Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
• Operation status byte provides software method for detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
• WP# signal: Write protect entire device
• First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
• RESET (FFh) required as first command after power-on
• Alternate method of device initialization (Nand_In it) after power up (contact factory)
• Internal data move operations supported within the plane from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA

Specifications

Attribute	Attribute Value
Manufacturer	Micron Technology Inc.
Product Category	Memory ICs
Series	-
Packaging	Tape & Reel (TR) Alternate Packaging
Package-Case	63-VFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.7 V ~ 3.6 V
Supplier-Device-Package	63-VFBGA (9x11)
Memory Capacity	4G (512M x 8)
Memory-Type	FLASH - NAND
Speed	-
Format-Memory	FLASH

Descriptions

FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

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Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 
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Total Annual:

1000000-3000000
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Employee Number:

100~150 
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Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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