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China CY14B101PA-SFXI IC NVSRAM 1MBIT SPI 40MHZ 16SOIC Infineon Technologies
China CY14B101PA-SFXI IC NVSRAM 1MBIT SPI 40MHZ 16SOIC Infineon Technologies

  1. China CY14B101PA-SFXI IC NVSRAM 1MBIT SPI 40MHZ 16SOIC Infineon Technologies

CY14B101PA-SFXI IC NVSRAM 1MBIT SPI 40MHZ 16SOIC Infineon Technologies

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  2. Price: Based on current price
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Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface SPI
Clock Frequency 40 MHz
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Brand Name Infineon Technologies
Model Number CY14B101PA-SFXI

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  1. Product Details
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Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM) Memory Size 1Mbit
Memory Organization 128K x 8 Memory Interface SPI
Clock Frequency 40 MHz Write Cycle Time - Word, Page -
Access Time - Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width) Supplier Device Package 16-SOIC
Brand Name Infineon Technologies Model Number CY14B101PA-SFXI

Product Details

 

Overview

The Cypress CY14X101PA combines a 1 Mbit nvSRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instruction.

 

 

Features

■ 1-Mbit nonvolatile static random access memory (nvSRAM)
❐ Internally organized as 128 K × 8
❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using SPI instruction (Software STORE) or HSB pin (Hardware STORE)
❐ RECALL to SRAM initiated on power-up (Power Up RECALL) or by SPI instruction (Software RECALL)
❐ Automatic STORE on power-down with a small capacitor
■ High reliability
❐ Infinite read, write, and RECALL cycles
❐ 1 million STORE cycles to QuantumTrap
❐ Data retention: 20 years at 85 °C
■ Real time clock (RTC)
❐ Full-featured RTC
❐ Watchdog timer
❐ Clock alarm with programmable interrupts
❐ Backup power fail indication
❐ Square wave output with programmable frequency (1 Hz, 512 Hz, 4096 Hz, 32.768 kHz)
❐ Capacitor or battery backup for RTC
❐ Backup current of 0.45 µA (typical)
■ 40 MHz, and 104 MHz High-speed serial peripheral interface (SPI)
❐ 40 MHz clock rate SPI write and read with zero cycle delay
❐ 104 MHz clock rate SPI write and read (with special fast read instructions)
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ SPI access to special functions
❐ Nonvolatile STORE/RECALL
❐ 8-byte serial number
❐ Manufacturer ID and Product ID
❐ Sleep mode
■ Write protection
❐ Hardware protection using Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ Average active current of 3 mA at 40 MHz operation
❐ Average standby mode current of 250 µA
❐ Sleep mode current of 8 µA
■ Industry standard configurations
❐ Operating voltages:
• CY14C101PA: VCC = 2.4 V to 2.6 V
• CY14B101PA: VCC = 2.7 V to 3.6 V
• CY14E101PA: VCC = 4.5 V to 5.5 V
❐ Industrial temperature
❐ 16-pin small outline integrated circuit (SOIC) package
❐ Restriction of hazardous substances (RoHS) compliant

 

 

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor Corp
Product Category Resonators
Mfr Cypress Semiconductor Corp
Series -
Package Tube
Product-Status Active
Memory-Type Non-Volatile
Memory-Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory-Size 1Mb (128K x 8)
Memory-Interface SPI
Clock-Frequency 40 MHz
Write-Cycle-Time-Word-Page -
Voltage-Supply 2.7V ~ 3.6V
Operating-Temperature -40°C ~ 85°C (TA)
Mounting-Type Surface Mount
Package-Case 16-SOIC (0.295" 7.50mm Width)
Supplier-Device-Package 16-SOIC
Base-Product-Number CY14B101

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part# Description Manufacturer Compare
CY14C101Q3A-SF104XI
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14C101Q3A-SF104XI
CY14B101PA-SF104XIT
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101PA-SF104XIT
CY14B101Q3-SFXI
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101Q3-SFXI
CY14B101Q3-SFXIT
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101Q3-SFXIT
CY14B101PA-SFXIT
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101PA-SFXIT
CY14B101P-SFXI
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101P-SFXI
CY14B101PA-SF104XI
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101PA-SF104XI
CY14B101P-SFXIT
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101P-SFXIT
CY14B101I-SFXI
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101I-SFXI
CY14B101I-SFXIT
Memory
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 Cypress Semiconductor CY14B101PA-SFXI vs CY14B101I-SFXIT

Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) SPI 40MHz 16-SOIC
NVRAM NVSRAM Serial-SPI 1Mbit 3.3V 16-Pin SOIC Tube
NVRAM 1Mb 3V 40Mhz 128K x 8 SPI nvSRAM

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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