SST38VF6401B-70I/CD IC FLASH 64MBIT PARALLEL 48TFBGA Microchip Technology

MOQ： 1
Price： Based on current price
Get Latest Price


Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH
Memory Size	64Mbit
Memory Organization	4M x 16
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	10µs
Access Time	70 ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFBGA
Supplier Device Package	48-TFBGA (6x8)
Brand Name	Microchip Technology
Model Number	SST38VF6401B-70I/CD

View Detail Information

Contact Now Ask for best deal

Get Latest Price Request a quote

Explore similar products

128Mbit Flash Memory IC S25FS128SDSNFI100 SPI/QUAD 8WSON Infineon Technologies

Get Latest Price
2.7V-3.6V Flash Memory IC W25Q32JVSSIQ 32MBIT SPI/QUAD 8SOIC Winbond Electronics

Get Latest Price
AT28HC64B-12JU Flash Memory IC 64Kbit Non Volatile 32PLCC Microchip Technology

Get Latest Price
Surface Mount Flash Memory Chip 64Kbit , CAT28C64BG-12T Flash IC EEPROM

Get Latest Price

Product Details
Company Details

Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH	Memory Size	64Mbit
Memory Organization	4M x 16	Memory Interface	Parallel
Clock Frequency	-	Write Cycle Time - Word, Page	10µs
Access Time	70 ns	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	48-TFBGA	Supplier Device Package	48-TFBGA (6x8)
Brand Name	Microchip Technology	Model Number	SST38VF6401B-70I/CD

Product Details

PRODUCT DESCRIPTION

The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits word alterable E2PROM manufactured with SST’s proprietary, high performance SuperFlash Technology. The SST38VF166 erases and programs with a single power supply. The internal Erase/Program in the E2 bank is transparent to the user. The device conforms to (proposed) JEDEC standard pinouts for word-wide memories.

FEATURES:

• Single 2.7-3.6V Read and Write Operations
• Separate Memory Banks for Code or Data
– Simultaneous Read and Write Capability
• Superior Reliability
– Endurance:
E2 bank - 500,000 Cycles (typical)
Flash bank - 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current, Read: 15 mA (typical)
– Active Current, Concurrent Read while Write: 40 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode Current: 3 µA (typical)
• Fast Write Operation
– Flash Bank-Erase + Program: 8 sec (typical)
– Flash Block-Erase + Program: 500 ms (typical)
– Flash Sector-Erase + Program: 30 ms (typical)
– E2 bank Word-Write: 9 ms (typical)
• Fixed Erase, Program, Write Times
– Remain constant after cycling
• Read Access Time
– 70 ns
• Latched Address and Data
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• E2 Bank:
– Word-Write (Auto Erase before Program)
– Sector-Erase (32 Words) + Word-Program (same as Flash bank)
• Flash Bank: Two Small Erase Element Sizes
– 1 KWords per Sector or 32 KWords per Block
– Erase either element before Word-Program
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 48-Pin TSOP (12mm x 20mm)
• Continuous Hardware and Software Data Protection (SDP)
• A One Time Programmable (OTP) E2 Sector

Specifications

Attribute	Attribute Value
Manufacturer	Microchip Technology
Product Category	Memory ICs
Series	SST38
Packaging	Tray Alternate Packaging
Mounting-Style	SMD/SMT
Operating-Temperature-Range	- 40 C to + 85 C
Package-Case	48-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.7 V ~ 3.6 V
Supplier-Device-Package	48-TFBGA (6x8)
Memory Capacity	64M (4M x 16)
Memory-Type	FLASH
Speed	70ns
Architecture	Sector
Format-Memory	FLASH
Interface-Type	Parallel
Organization	4 M x 16
Supply-Current-Max	30 mA
Data-Bus-Width	16 bit
Supply-Voltage-Max	3.6 V
Supply-Voltage-Min	2.7 V
Package-Case	TFBGA-48
Timing-Type	Asynchronous

Descriptions

FLASH Memory IC 64Mb (4M x 16) Parallel 70ns 48-TFBGA (6x8)

Flash Parallel 3.3V 64M-bit 4M x 16 70ns 48-Pin TFBGA Tray

Flash Memory 64 Mbit x16 Advanced Multi-Pur Flash plus

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory



Business Type:

Distributor/Wholesaler,Trading Company 


Year Established:

2005 


Total Annual:

1000000-3000000


Employee Number:

100~150 


Ecer Certification：

Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

+ Read More

Reach Us
Sanhuang electronics (Hong Kong) Co., Limited
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
https://www.integratedcircuit-ic.com/

Send Email

Leave a Message, we will call you back quickly!