China factories

China factory - Sanhuang electronics (Hong Kong) Co., Limited

Sanhuang electronics (Hong Kong) Co., Limited

  • China,Shenzhen
  • Verified Supplier

Leave a Message

we will call you back quickly!

Submit Requirement
China W631GG8KB-11 IC DRAM 1GBIT PAR 78WBGA Winbond Electronics
China W631GG8KB-11 IC DRAM 1GBIT PAR 78WBGA Winbond Electronics

  1. China W631GG8KB-11 IC DRAM 1GBIT PAR 78WBGA Winbond Electronics

W631GG8KB-11 IC DRAM 1GBIT PAR 78WBGA Winbond Electronics

  1. MOQ: 1
  2. Price: Based on current price
  3. Get Latest Price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Clock Frequency 933 MHz
Write Cycle Time - Word, Page -
Access Time 20 ns
Voltage - Supply 1.425V ~ 1.575V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-WBGA (10.5x8)
Brand Name Winbond Electronics
Model Number W631GG8KB-11

View Detail Information

Contact Now Ask for best deal
Get Latest Price Request a quote
  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR3 Memory Size 1Gbit
Memory Organization 128M x 8 Memory Interface Parallel
Clock Frequency 933 MHz Write Cycle Time - Word, Page -
Access Time 20 ns Voltage - Supply 1.425V ~ 1.575V
Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount
Package / Case 78-TFBGA Supplier Device Package 78-WBGA (10.5x8)
Brand Name Winbond Electronics Model Number W631GG8KB-11

Product Details

 

GENERAL DESCRIPTION

The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A and 15K. The -11 speed grade is compliant to the DDR3-1866 (13-13-13) specification. The -12, 12I, 12A and 12K speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15, 15I, 15A and 15K speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C).

 

 

FEATURES

 Power Supply: VDD, VDDQ = 1.5V ± 0.075V
 Double Data Rate architecture: two data transfers per clock cycle
 Eight internal banks for concurrent operation
 8 bit prefetch architecture
 CAS Latency: 6, 7, 8, 9, 10, 11 and 13
 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
 Programmable read burst ordering: interleaved or nibble sequential
 Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
 Edge-aligned with read data and center-aligned with write data
 DLL aligns DQ and DQS transitions with clock
 Differential clock inputs (CK and CK#)
 Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
 Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
 Auto-precharge operation for read and write bursts
 Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
 Precharged Power Down and Active Power Down

 

Specifications

Attribute Attribute Value
Manufacturer Winbond Electronics
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 78-TFBGA
Operating-Temperature 0°C ~ 95°C (TC)
Interface Parallel
Voltage-Supply 1.425 V ~ 1.575 V
Supplier-Device-Package 78-WBGA (10.5x8)
Memory Capacity 1G (128M x 8)
Memory-Type DDR3 SDRAM
Speed 933MHz
Format-Memory RAM

Descriptions

SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 933MHz 20ns 78-WBGA (10.5x8)
DRAM Chip DDR3 SDRAM 1Gbit 128Mx8 1.5V 78-Pin WBGA

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

+ Read More

Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement