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Sanhuang electronics (Hong Kong) Co., Limited

  • China,Shenzhen
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China IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon
China IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon

  1. China IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon

IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon

  1. MOQ: 1
  2. Price: Based on current price
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Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page -
Access Time 3.1 ns
Voltage - Supply 3.135V ~ 3.465V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 100-LQFP
Supplier Device Package 100-LQFP (14x20)
Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS61NLP25636A-200TQLI

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Volatile Memory Format SRAM
Technology SRAM - Synchronous, SDR Memory Size 9Mbit
Memory Organization 256K x 36 Memory Interface Parallel
Clock Frequency 200 MHz Write Cycle Time - Word, Page -
Access Time 3.1 ns Voltage - Supply 3.135V ~ 3.465V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20)
Brand Name ISSI, Integrated Silicon Solution Inc Model Number IS61NLP25636A-200TQLI

Product Details

 

DESCRIPTION

The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

 

 

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series IS61NLP25636A
Type Synchronous
Packaging Tray Alternate Packaging
Unit-Weight 0.023175 oz
Mounting-Style SMD/SMT
Package-Case 100-LQFP
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3.135 V ~ 3.465 V
Supplier-Device-Package 100-TQFP (14x20)
Memory Capacity 9M (256K x 36)
Memory-Type SRAM - Synchronous
Speed 200MHz
Data-Rate SDR
Access-Time 3.1 ns
Format-Memory RAM
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Interface-Type Parallel
Organization 256 k x 36
Supply-Current-Max 280 mA
Supply-Voltage-Max 3.465 V
Supply-Voltage-Min 3.135 V
Package-Case TQFP-100
Maximum-Clock-Frequency 200 MHz

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part# Description Manufacturer Compare
IS61NLP25636A-200TQI
Memory
256KX36 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 Integrated Silicon Solution Inc IS61NLP25636A-200TQLI vs IS61NLP25636A-200TQI
IS61NLP25636A-200TQL
Memory
ZBT SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100 Integrated Silicon Solution Inc IS61NLP25636A-200TQLI vs IS61NLP25636A-200TQL

Descriptions

SRAM - Synchronous Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-TQFP (14x20)
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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