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Sanhuang electronics (Hong Kong) Co., Limited

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China CY7C199D-10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies
China CY7C199D-10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies

  1. China CY7C199D-10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies

CY7C199D-10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies

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  2. Price: Based on current price
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Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 256Kbit
Memory Organization 32K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package 28-SOJ
Brand Name Infineon Technologies
Model Number CY7C199D-10VXI

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Volatile Memory Format SRAM
Technology SRAM - Asynchronous Memory Size 256Kbit
Memory Organization 32K x 8 Memory Interface Parallel
Clock Frequency - Write Cycle Time - Word, Page 10ns
Access Time 10 ns Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package 28-SOJ
Brand Name Infineon Technologies Model Number CY7C199D-10VXI

Product Details

 

Functional Description [1]

The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

 

 

Features

• Pin- and function-compatible with CY7C199C
• High speed
— tAA = 10 ns
• Low active power
— ICC = 80 mA @ 10 ns
• Low CMOS standby power
— ISB2 = 3 mA
• 2.0V Data Retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
• Available in Pb-free 28-pin 300-Mil wide Molded SOJ and
28-pin TSOP I packages

 

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series CY7C199D
Type Asynchronous
Packaging Tube Alternate Packaging
Mounting-Style SMD/SMT
Package-Case 28-BSOJ (.300", 7.62mm Width)
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 4.5 V ~ 5.5 V
Supplier-Device-Package 28-SOJ
Memory Capacity 256K (32K x 8)
Memory-Type SRAM - Asynchronous
Speed 10ns
Data-Rate SDR
Access-Time 10 ns
Format-Memory RAM
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Interface-Type Parallel
Organization 32 k x 8
Supply-Current-Max 80 mA
Supply-Voltage-Max 5.5 V
Supply-Voltage-Min 4.5 V
Package-Case SOJ-28
Mfr Cypress Semiconductor Corp
Series -
Package Tube
Product-Status Active
Memory-Type Volatile
Memory-Format SRAM
Technology SRAM - Asynchronous
Memory-Size 256Kb (32K x 8)
Memory-Interface Parallel
Write-Cycle-Time-Word-Page 10ns
Voltage-Supply 4.5V ~ 5.5V
Mounting-Type Surface Mount
Package-Case 28-BSOJ (0.300" 7.62mm Width)
Base-Product-Number CY7C199

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part# Description Manufacturer Compare
IS61C256AL-10JL
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28 Integrated Silicon Solution Inc CY7C199D-10VXI vs IS61C256AL-10JL
IS61C256AL-10TL
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, LEAD FREE, PLASTIC, TSOP1-28 Integrated Silicon Solution Inc CY7C199D-10VXI vs IS61C256AL-10TL
CY7C199D-10ZXI
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, TSOP1-28 Cypress Semiconductor CY7C199D-10VXI vs CY7C199D-10ZXI
AS7C256A-10TCN
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, TSOP1-28 Alliance Memory Inc CY7C199D-10VXI vs AS7C256A-10TCN
CY7C199-10ZI
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Cypress Semiconductor CY7C199D-10VXI vs CY7C199-10ZI
CY7C199-10ZC
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Rochester Electronics LLC CY7C199D-10VXI vs CY7C199-10ZC
CY7C199-10VI
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Cypress Semiconductor CY7C199D-10VXI vs CY7C199-10VI
CY7C199-10VC
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Rochester Electronics LLC CY7C199D-10VXI vs CY7C199-10VC
CY7C199D-10VXIT
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28 Cypress Semiconductor CY7C199D-10VXI vs CY7C199D-10VXIT
PDM41256LA10TTY
Memory
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, PLASTIC, TSOP1-28 IXYS Corporation CY7C199D-10VXI vs PDM41256LA10TTY

Descriptions

SRAM Chip Async Single 5V 256K-bit 32K x 8 10ns 28-Pin SOJ Tube
SRAM 256Kb 10ns 32K x 8 SRAM

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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