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China factory - HongKong Wei Ya Hua Electronic Technology Co.,Limited

HongKong Wei Ya Hua Electronic Technology Co.,Limited

  • China,Shenzhen
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IGBT Transistor Module

Manufacturer of a wide range of products which include TLE92464EDHPXUMA1 Power Switch IC 1 : 4 N Channel 2.7A PG-DSO-36-72,IKWH40N65WR6XKSA1 IGBT Field Stop 650V 75A 175W Through Hole PG-TO247-3-32,Through Hole IGBT Transistor Mod...

Quality TLE92464EDHPXUMA1 Power Switch IC 1 : 4 N Channel 2.7A PG-DSO-36-72 for sale

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TLE92464EDHPXUMA1 Power Switch IC 1 : 4 N Channel 2.7A PG-DSO-36-72

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Output Type N-Channel
Interface SPI
Voltage - Load 6V ~ 18V
Voltage - Supply (Vcc/Vdd) 4.5V ~ 5.5V
Current - Output (Max) 2.7A
Rds On (Typ) 115mOhm
Brand Name Infineon Technologies
Model Number TLE92464EDHPXUMA1

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Quality IKWH40N65WR6XKSA1 IGBT Field Stop 650V 75A 175W Through Hole PG-TO247-3-32 for sale

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IKWH40N65WR6XKSA1 IGBT Field Stop 650V 75A 175W Through Hole PG-TO247-3-32

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 40A
Power - Max 175 W
Brand Name Infineon Technologies
Model Number IKWH40N65WR6XKSA1

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Quality Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3 for sale

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Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 36 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Power - Max 176 W
Switching Energy 750µJ (on), 700µJ (off)
Brand Name Infineon Technologies
Model Number IKW15N120CS7XKSA1

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Quality RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N for sale

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RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 73 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Power - Max 272 W
Switching Energy 1.05mJ (on), 1.03mJ (off)
Brand Name ROHM Semiconductor
Model Number RGS80TS65HRC11

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Quality WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W for sale

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WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 91 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 278 W
Switching Energy 1.7mJ (on), 600µJ (off)
Brand Name WeEn Semiconductors
Model Number WG50N65DHWQ

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Quality BIDW30N60T Trench Field Stop IGBT 600V 60A 230W Through Hole TO-247 for sale

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BIDW30N60T Trench Field Stop IGBT 600V 60A 230W Through Hole TO-247

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 30A
Power - Max 230 W
Gate Charge 76 nC
Brand Name Bourns
Model Number BIDW30N60T

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Quality VS-GT90DA120U IGBT Transistor Module Single 1200V 169A 781W Chassis Mount SOT-227 for sale

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VS-GT90DA120U IGBT Transistor Module Single 1200V 169A 781W Chassis Mount SOT-227

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 169 A
Power - Max 781 W
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
Current - Collector Cutoff (Max) 100 µA
Operating Temperature -40°C ~ 150°C (TJ)
Brand Name Vishay Semiconductors
Model Number VS-GT90DA120U

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Quality VS-GT75YF120NT IGBT Transistor Module Full Bridge 1200V 118A 431W Chassis Mount for sale

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VS-GT75YF120NT IGBT Transistor Module Full Bridge 1200V 118A 431W Chassis Mount

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 118 A
Power - Max 431 W
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
Current - Collector Cutoff (Max) 100 µA
Operating Temperature -40°C ~ 150°C (TJ)
Brand Name Vishay Semiconductors
Model Number VS-GT75YF120NT

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Quality FGHL75T65LQDTL4 Fs4 Discrete Semiconductor Products IGBT Low Vcesat 50V 75A TO2 for sale

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FGHL75T65LQDTL4 Fs4 Discrete Semiconductor Products IGBT Low Vcesat 50V 75A TO2

  1. MOQ: 50pcs

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Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Power - Max 469 W
Switching Energy 1.01mJ (on), 2.53mJ (off)
Brand Name onsemi
Model Number FGHL75T65LQDTL4

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Quality IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount for sale

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IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

  1. MOQ: 50pcs

  2. Price: Negotiable

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Supply Ability 1000000pcs
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Rds On (Max) @ Id, Vgs 468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id 5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 18 V
Vgs (Max) +18V, -15V
Brand Name Infineon Technologies
Model Number IMBG120R350M1HXTMA1

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  • HongKong Wei Ya Hua Electronic Technology Co.,Limited
  • Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen
  • http://www.weiyahua.com/

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