Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High

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Usage	Industry Usage
Chemical Composition	Al2O3, SiO2
Sic Content	85%
Maximum Temperature	1600℃
Characteristics	High wear resistance
Thermal Expansion Coefficient	4.0-4.5 × 10^-6 /K
Material Composition	4%Si >96%Sic
Working Temperature	1650
Advantage	Wear and abrasion resistance
Purity	98%
Material	SiC
Acid Alkaline Proof	excellent
Solubility	Insoluble
Open Porosity	<0.1%
Flexural Strength	380MPa
Payment Terms	L/C,D/A,D/P,T/T,Western Union,MoneyGram
Packaging Details	Strong wooden box for Global shipping
Delivery Time	Negotiable
Composition:SiC	>98%
Color	Black
Density	>3.05g/cm3
Max. Service Temp	1650°C
Model Number	Customizable
Brand Name	KEGU
Place of Origin	China

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Product Specification


Usage	Industry Usage	Chemical Composition	Al2O3, SiO2
Sic Content	85%	Maximum Temperature	1600℃
Characteristics	High wear resistance	Thermal Expansion Coefficient	4.0-4.5 × 10^-6 /K
Material Composition	4%Si >96%Sic	Working Temperature	1650
Advantage	Wear and abrasion resistance	Purity	98%
Material	SiC	Acid Alkaline Proof	excellent
Solubility	Insoluble	Open Porosity	<0.1%
Flexural Strength	380MPa	Payment Terms	L/C,D/A,D/P,T/T,Western Union,MoneyGram
Packaging Details	Strong wooden box for Global shipping	Delivery Time	Negotiable
Composition:SiC	>98%	Color	Black
Density	>3.05g/cm3	Max. Service Temp	1650°C
Model Number	Customizable	Brand Name	KEGU
Place of Origin	China
High Light	Icp Etching Wafer Holder Sic Plate ，Wafer Holder Silicon Carbide Plate ，Led Industry Sic Plate

Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing

Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures.

Key Material Advantages

Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer
Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life
High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads
Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling

Silicon Carbide (SiC) Material Properties

Property	Value
Compound Formula	SiC
Molecular Weight	40.1
Appearance	Black
Melting Point	2,730 °C (decomposes)
Density	3.0 - 3.2 g/cm³
Electrical Resistivity	1 - 4 x 10¹ Ω*m
Poisson's Ratio	0.15 - 0.21
Specific Heat	670 - 1180 J/kg*K

Comparative Specifications: SiC Tray Types

Type	Recrystallized SiC	Sintered SiC	Reaction Bonded SiC
Purity	> 99.5%	> 98%	> 88%
Max. Working Temp.	1650 °C	1550 °C	1300 °C
Bulk Density (g/cm³)	2.7	3.1	> 3.0
Apparent Porosity	< 15%	< 2.5%	< 0.1%
Flexural Strength (MPa)	110	400	380
Compressive Strength (MPa)	> 300	2200	2100
Thermal Expansion (10⁻⁶/°C)	4.6 (at 1200°C)	4.0 (at <500°C)	4.4 (at <500°C)
*Thermal Conductivity (W/mK)**	35 - 36	110	65
Primary Characteristics	High-Temperature Resistance, High Purity	High Fracture Toughness	Excellent Chemical Resistance

Critical Features for ICP Etching

Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients
Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency
Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer

Primary Applications

Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy
LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes
Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability

We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.

Company Details

Bronze Gleitlager

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Business Type:

Manufacturer,Trading Company 
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Year Established:

2017 
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Ecer Certification：

Verified Supplier 

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Reach Us
Shaanxi KeGu New Material Technology Co., Ltd
No. 2 Workshop, Zone B, Dongyuan Ceramic Industrial Park, Wangyi District, Tongchuan, Shaanxi 727000, China
https://www.hitech-ceram.com/

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