SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 3-6 months |
| Packaging Details | package in 100-grade cleaning room |
| Work material | Au (gold), Pt (platinum), Cu (copper) |
| Applications | Semiconductor Manufacturing,Optical Devices |
| Advantage | High Precision,Non-Selective Etching |
| Precision | 10 nanometers or less |
| Etching material | Si/SiO2/Metals |
| Brand Name | ZMSH |
| Model Number | Ion Beam Etching Machine |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 3-6 months |
| Packaging Details | package in 100-grade cleaning room | Work material | Au (gold), Pt (platinum), Cu (copper) |
| Applications | Semiconductor Manufacturing,Optical Devices | Advantage | High Precision,Non-Selective Etching |
| Precision | 10 nanometers or less | Etching material | Si/SiO2/Metals |
| Brand Name | ZMSH | Model Number | Ion Beam Etching Machine |
| Certification | rohs | Place of Origin | CHINA |
Ion Beam Etching Machine of Si/SiO2/Metals Materials
Ion beam etching, also known as ion milling, is a non-selective and anisotropic dry etching technology. Its core principle involves using a broad, collimated high-energy ion beam generated by an ion source to bombard the workpiece surface in a vacuum environment, thereby removing material through physical sputtering. Unlike plasma etching, the sample is not directly exposed to the plasma, thus avoiding electrical damage and contamination caused by plasma and enabling better process control.
An ion beam etching system typically consists of the following key subsystems:
| Subsystem | Core Function | Key Technical Points and Impact |
| Vacuum System | Provide high vacuum environment | Determines process cleanliness, beam stability, and ultimate precision. |
| Ion Source | Generate and extract ion beam | Determines etching rate, uniformity, available gas types, and equipment reliability (RF source vs. Kaufman source). |
| Sample Stage | Secure and manipulate samples | Rotation function is key to achieving anisotropic etching; temperature control affects process window. |
| Control System | Fully automated process control | Ensures process repeatability and precision; end-point detection enhances process capability. |
| Neutralizer | Neutralize ion beam charge | Prevents charging damage on insulating materials; essential for etching dielectric materials. |
Ion beam etching (IBE) is an advanced micro/nano fabrication technology that uses a high-energy ion beam to remove material from the surface, enabling precise pattern transfer.
The principle of ion beam etching involves a high-energy ion beam (typically argon ions) generated by an ion source, which bombards the material surface vertically or at an oblique angle. The high-energy ions collide with atoms on the material surface, causing atoms to be ejected and removing material layer by layer, thus achieving etching. This etching method can be performed without chemical reactions, belonging to a physical etching process.
Structure diagram of ion beam etching equipment
Processing Capabilities:
Process Flow:
Schematic diagram of ion beam etching process
1. Semiconductor Manufacturing: Used for creating fine circuits and patterns in integrated circuit fabrication.
2. Optical Devices: Applied in precision machining of optical components, such as surface treatment of gratings and lenses.
3. Nanotechnology: Fabrication of nanostructures and devices, such as nanopores and nanowires.
4. Materials Science: Used for studying physical and chemical properties of material surfaces and preparing functional surface materials.
1. Advantages:
Case study of ion beam etching (IBE)
2. Materials That Can Be Etched:
3. Etching Precision:
The precision of ion beam etching primarily depends on the focusing capability of the ion beam, the resolution of the mask, and the control of etching time. It typically achieves precision of 10 nanometers or even higher, depending on specific process parameters and equipment conditions.
1. Q: What is ion beam etching?
A: Ion beam etching (IBE) is a dry etching process that removes material by physically sputtering the target surface with a broad, collimated beam of high-energy ions in a high vacuum.
2. Q: What is the difference between ion beam etching and reactive ion etching?
A: The key difference is that IBE is a purely physical process where the sample is separated from the ion source, while RIE combines both physical ion bombardment and chemical reactions with the sample directly in the plasma.
Tag: #Ion Beam Etching Machine, #Customized, #Si/SiO2/Metals Materials
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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