Material | SiC Crystal |
Type | N |
Size | 2/3/4/6/8/12 |
Thickness | 500um±50um |
Orientations | 4.0 deg off axis + 0.5deg toward <11-20> |
Surface roughness (Carbon face) | Ra < 0.5nm with Carbon face epi-ready |
Resistivity | < 0.25 ohm.cm |
Surface roughness (Silicon face) | Optical polished |
TTV | <10um |
BOW | <30um |
Wrap | <30Um |
Brand Name | zmsh |
Place of Origin | China |
View Detail Information
Explore similar products
4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon
Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2
2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
Product Specification
Material | SiC Crystal | Type | N |
Size | 2/3/4/6/8/12 | Thickness | 500um±50um |
Orientations | 4.0 deg off axis + 0.5deg toward <11-20> | Surface roughness (Carbon face) | Ra < 0.5nm with Carbon face epi-ready |
Resistivity | < 0.25 ohm.cm | Surface roughness (Silicon face) | Optical polished |
TTV | <10um | BOW | <30um |
Wrap | <30Um | Brand Name | zmsh |
Place of Origin | China | ||
High Light | Dummy Silicon Carbide Wafer ,Prime Silicon Carbide Wafer ,4H-N Silicon Carbide Wafer |
4H-N 2/3/4/6/8/12 Inch Silicon Carbide (SiC) Substrate – Prime/Dummy/Research Grade
This product series provides high-purity Silicon Carbide (SiC) substrates in multiple diameters (2", 3", 4", 6", 8", and 12"), designed for advanced semiconductor, power electronics, and optoelectronic applications. Available in Prime (device-grade), Dummy (process-testing), and Research (experimental) grades, these substrates feature excellent thermal conductivity (> 400 W/m·K for SiC), high breakdown voltage, and superior chemical stability.
The Prime Grade ensures ultra-low defect density, making it ideal for high-performance devices like MOSFETs, Schottky diodes, and RF components. The Dummy Grade offers cost-effective solutions for process optimization, while the Research Grade supports academic and industrial R&D in wide-bandgap semiconductor technologies.
With customizable specifications (doping, thickness, polishing), these substrates meet the stringent demands of power electronics, 5G communications, and electric vehicle (EV) applications.
Specifications Table
Properties | Specifications |
Material | 4H SiC |
Packing | Single wafer package |
Type | N Type |
Diameter | 150 mm ±0.25 mm (4 inch) |
Thickness | 500μm ±50 μm |
Surface roughness (Carbon face) | Ra ≤0.5nm with Carbon face epi-ready |
Surface roughness (Silicon face) | Optical polished |
Orientations | 4.0 deg off axis ±0.5deg toward <11-20> |
MPD | ≤0.5/cm² or less |
TTV/BOW/Warp | <10μm /<30μm /<30μm |
FWHM | ≤30 arc-sec or less |
Primary & Secondary Flat | NOT REQUIRED (No flat grinding) |
Resistivity | <0.25 ohm.cm |
Applications of SiC Wafers
Our 4H-N substrates are engineered for cutting-edge technologies across multiple industries:
1. Power Electronics
- Electric Vehicles (EVs): High-voltage SiC MOSFETs and inverters for efficient power conversion.
- Fast Charging Systems: Enables compact, high-efficiency chargers for EVs and consumer electronics.
- Industrial Motor Drives: Robust performance in high-temperature environments.
2. RF & Wireless Communication
- 5G Base Stations: High-frequency transistors with low signal loss.
- Radar & Satellite Systems: Enhanced power handling for aerospace and defense applications.
3. Optoelectronics
- UV LEDs & Lasers: Superior thermal management for high-brightness applications.
4.Research Technologies
- Wide-Bandgap Semiconductor Research: Fundamental studies on material properties.
Frequently Asked Questions (FAQ)
1.Can these substrates be customized in terms of doping and thickness?
Yes, we offer N-type (Nitrogen-doped) and P-type (Aluminum-doped) variants with adjustable resistivity. Thickness can range cunstomized too.
2.What is the lead time for orders?
- Standard sizes (2"-6"): 2-4 weeks.
- Large sizes (8"-12"): 4-6 weeks (subject to availability).
3.How should the substrates be stored and handled?
- Store in cleanroom conditions (Class 1000 or better).
- Handle with nitrile gloves to avoid contamination.
- Avoid mechanical stress on edges.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
Get in touch with us
Leave a Message, we will call you back quickly!