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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research
China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research

  1. China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research
  2. China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research
  3. China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research
  4. China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research

Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research

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Material SiC Crystal
Type N
Size 2/3/4/6/8/12
Thickness 500um±50um
Orientations 4.0 deg off axis + 0.5deg toward <11-20>
Surface roughness (Carbon face) Ra < 0.5nm with Carbon face epi-ready
Resistivity < 0.25 ohm.cm
Surface roughness (Silicon face) Optical polished
TTV <10um
BOW <30um
Wrap <30Um
Brand Name zmsh
Place of Origin China

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  1. Product Details
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Product Specification

Material SiC Crystal Type N
Size 2/3/4/6/8/12 Thickness 500um±50um
Orientations 4.0 deg off axis + 0.5deg toward <11-20> Surface roughness (Carbon face) Ra < 0.5nm with Carbon face epi-ready
Resistivity < 0.25 ohm.cm Surface roughness (Silicon face) Optical polished
TTV <10um BOW <30um
Wrap <30Um Brand Name zmsh
Place of Origin China
High Light Dummy Silicon Carbide WaferPrime Silicon Carbide Wafer4H-N Silicon Carbide Wafer

 

4H-N 2/3/4/6/8/12 Inch Silicon Carbide (SiC) Substrate – Prime/Dummy/Research Grade

 


This product series provides high-purity Silicon Carbide (SiC) substrates in multiple diameters (2", 3", 4", 6", 8", and 12"), designed for advanced semiconductor, power electronics, and optoelectronic applications. Available in Prime (device-grade), Dummy (process-testing), and Research (experimental) grades, these substrates feature excellent thermal conductivity (> 400 W/m·K for SiC), high breakdown voltage, and superior chemical stability.

 

The Prime Grade ensures ultra-low defect density, making it ideal for high-performance devices like MOSFETs, Schottky diodes, and RF components. The Dummy Grade offers cost-effective solutions for process optimization, while the Research Grade supports academic and industrial R&D in wide-bandgap semiconductor technologies.

With customizable specifications (doping, thickness, polishing), these substrates meet the stringent demands of power electronics, 5G communications, and electric vehicle (EV) applications.

 

 

 


 

Specifications Table

 

 

Properties Specifications
Material 4H SiC
Packing Single wafer package
Type N Type
Diameter 150 mm ±0.25 mm (4 inch)
Thickness 500μm ±50 μm
Surface roughness (Carbon face) Ra ≤0.5nm with Carbon face epi-ready
Surface roughness (Silicon face) Optical polished
Orientations 4.0 deg off axis ±0.5deg toward <11-20>
MPD ≤0.5/cm² or less
TTV/BOW/Warp <10μm /<30μm /<30μm
FWHM ≤30 arc-sec or less
Primary & Secondary Flat NOT REQUIRED (No flat grinding)
Resistivity <0.25 ohm.cm

 


 

Applications of SiC Wafers

 

Our 4H-N substrates are engineered for cutting-edge technologies across multiple industries:

 

1. Power Electronics 
- Electric Vehicles (EVs): High-voltage SiC MOSFETs and inverters for efficient power conversion.
- Fast Charging Systems: Enables compact, high-efficiency chargers for EVs and consumer electronics.

- Industrial Motor Drives: Robust performance in high-temperature environments.

 

2. RF & Wireless Communication
- 5G Base Stations: High-frequency transistors with low signal loss.
- Radar & Satellite Systems: Enhanced power handling for aerospace and defense applications.

 

3. Optoelectronics
- UV LEDs & Lasers: Superior thermal management for high-brightness applications.

 

4.Research Technologies
- Wide-Bandgap Semiconductor Research: Fundamental studies on material properties.

 

 

 


 

Frequently Asked Questions (FAQ)

 

1.Can these substrates be customized in terms of doping and thickness?

Yes, we offer N-type (Nitrogen-doped) and P-type (Aluminum-doped) variants with adjustable resistivity. Thickness can range cunstomized too.

 

2.What is the lead time for orders?

- Standard sizes (2"-6"): 2-4 weeks.
- Large sizes (8"-12"): 4-6 weeks (subject to availability).

 

3.How should the substrates be stored and handled?

- Store in cleanroom conditions (Class 1000 or better).
- Handle with nitrile gloves to avoid contamination.
- Avoid mechanical stress on edges.

Company Details

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  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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