SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4weeks |
| Size | 4inch/6inch/8inch |
| Surface Roughness | Ra<0.5nm |
| Fracture Toughness | 3.5 MPa·m¹/² |
| CTE (4H-SiC) | 4.2×10⁻⁶/K |
| Resistivity (SI) | >1×10⁶ Ω·cm |
| Application | Power electronics, radio frequency and 5G communication |
| Brand Name | ZMSH |
| Model Number | SiCOI Wafers |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4weeks |
| Size | 4inch/6inch/8inch | Surface Roughness | Ra<0.5nm |
| Fracture Toughness | 3.5 MPa·m¹/² | CTE (4H-SiC) | 4.2×10⁻⁶/K |
| Resistivity (SI) | >1×10⁶ Ω·cm | Application | Power electronics, radio frequency and 5G communication |
| Brand Name | ZMSH | Model Number | SiCOI Wafers |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 8 Inch 4H-SiCOI Wafers ，4 Inch 4H-SiCOI Wafers ，6 Inch 4H-SiCOI Wafers | ||
Abstract of SiCOI Wafers
SICOI (Silicon Carbide on Insulator) wafers represent an advanced composite substrate technology fabricated through either Smart Cut™ or Bonding & Thinning processes. ZMSH supply 4-6 inch 4H-SICOI wafers by integrating high-quality SiC thin films with insulating layers (SiO₂/AlN) on silicon or SiC substrates via hydrophilic bonding or plasma-activated bonding techniques. Smart Cut™ Process: Utilizes hydrogen ion implantation, low-temperature bonding, and precision exfoliation to achieve ultra-thin SiC layers (50nm-20μm) with thickness uniformity of ±20nm, ideal for high-frequency, low-loss devices. Grinding+CMP Process: Suitable for thicker film requirements (200nm to custom thicknesses) with ±100nm uniformity, offering cost efficiency for power electronics applications. ZMSH provide customizable conductive or semi-insulating SiC films, with options for ion implantation annealing optimization or direct thinning/polishing to meet diverse performance and cost requirements.
| Component | Property | Specification | Measurement Standard |
| 4H-SiC Film | Crystal Structure | Single-crystal 4H-SiC | ASTM F2094 |
| Defect Density | <10³ cm⁻² (threading dislocations) | ||
| Surface Roughness (Ra) | <0.5 nm | AFM measurement | |
| Semi-insulating Resistivity | >10⁶ Ω·cm | SEMI MF397 | |
| N-type Doping Range | 10¹⁶-10¹⁹ cm⁻³ | ||
| Thermal Conductivity | >300 W/(m·K) | ||
| SiO₂ Layer | Formation Method | Thermal oxidation | |
| Dielectric Constant (ε) | 3.9 | JESD22-A109 | |
| Breakdown Field Strength | >10 MV/cm | ||
| Interface Trap Density | <10¹¹ cm⁻²eV⁻¹ | ||
| Si Substrate | Thermal Expansion (CTE) | ~3.5×10⁻⁶/°C | |
| Wafer Bow (8-inch) | <50 μm | SEMI M1 | |
| Temperature Stability | >300°C | ||
| Integrated Performance | Wafer Size Support | 4-8 inch formats |
1. Power Electronics
EV Inverters: SiC MOSFETs on SICOI substrates operate at 1200V with 30% lower switching losses, compatible with 800V fast-charging systems.
Industrial Motor Drives: SICOI wafers with AlN insulating layers enhance heat dissipation by 50%, supporting >10kW module packaging.
2. RF & 5G Communications
mmWave Power Amplifiers: GaN HEMTs on semi-insulating SICOI achieve 8W/mm output at 28GHz with >65% efficiency.
Phased Array Antennas: Low dielectric loss (tanδ<0.001) minimizes signal attenuation for satellite communications.
3. Quantum Computing & Sensing
Spin Qubit Carriers: Ultrathin SiC films (<100nm) provide low-noise environments, extending coherence times beyond 1ms.
High-Temp MEMS Sensors: Stable operation at 300°C for aerospace engine monitoring.
4. Consumer Electronics
Fast-Charging ICs: SICOI-based GaN devices enable >200W charging with 40% smaller footprint.
As a leading wide-bandgap semiconductor substrate provider, we offer end-to-end technical support from R&D to mass production:
· Custom Development: Optimize SiC film thickness (nanoscale to microns), doping (N/P-type), and insulating layers (SiO₂/AlN/Si₃N₄) per device requirements.
· Process Consultation: Recommend Smart Cut™ (high precision) or Grinding+CMP (cost-effective) solutions with comparative data.
· Wafer-Level Testing: Includes interface state analysis, thermal resistance mapping, and high-voltage reliability validation.
1. Q: What is SICOI wafer?
A: SICOI (Silicon Carbide on Insulator) wafer is an advanced composite substrate integrating single-crystal 4H-SiC film with SiO₂ insulating layer on silicon/sapphire base, enabling high-power and RF devices with superior thermal/electrical performance.
2. Q: How does SICOI compare to SOI?
A: SICOI offers 5x higher thermal conductivity (>300W/m·K) and 3x greater breakdown voltage (>8MV/cm) than SOI, making it ideal for 800V+ power electronics and 5G mmWave applications.
Tag: #4inch 6inch 8inch, #Customized, #4H-SiCOI Wafers, #Composite SiC on Insulator Substrates, #SiC, #SiO2, #Si
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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