Payment Terms | T/T |
Supply Ability | 1000pc/month |
Polytype | 4H-P |
Density | 3.23 g/cm3 |
Mohs Hardness | ≈9.2 |
Surface Orientation | On axis: [1120] ± 0.5° for 4H-P |
Packaging | Single independent aseptic packaging, cleanliness level 100 |
Application | LED chip, satellite communication |
Brand Name | ZMSH |
Model Number | SiC 4H-P |
Certification | rohs |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T | Supply Ability | 1000pc/month |
Polytype | 4H-P | Density | 3.23 g/cm3 |
Mohs Hardness | ≈9.2 | Surface Orientation | On axis: [1120] ± 0.5° for 4H-P |
Packaging | Single independent aseptic packaging, cleanliness level 100 | Application | LED chip, satellite communication |
Brand Name | ZMSH | Model Number | SiC 4H-P |
Certification | rohs | Place of Origin | CHINA |
High Light | 0° Sic silicon carbide wafer |
4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P-type conductivity is obtained by a specific doping process (such as doping aluminum and other elements). Such substrates typically have high doping concentrations and low resistivity, making them ideal for manufacturing high-power devices. An axis of 0° usually refers to the fact that a particular crystal direction or positioning edge of the substrate has an Angle of 0° from a reference direction (such as the substrate plane), which helps to ensure the consistency and reliability of the device in subsequent manufacturing processes.
Propery | P-type 4H-SiC, Single Crystal |
Lattice Parameters | a=3.082 Å c=10.092 Å |
Stacking Sequence | ABCB |
Mohs Hardness | ≈9.2 |
Density | 3.23 g/cm3 |
Therm. Expansion Coefficient | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) |
Refraction Index @750nm | no = 2.621 ne = 2.671 |
Dielectrc Constant | c~9.66 |
Thermal Conductivity | 3-5 W/cm·K@298K |
Band-Gap | 3.26 eV |
Break-Down Electrical Field | 2-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s |
Wafer Orientation | On axis: [1120] ± 0.5° for 4H/6H-P |
ZMSH provides a full range of silicon carbide substrate 4H-P (axis 0°) services, including precision custom processing to meet customer specific needs, the use of professional logistics channels to ensure product safety and on-time delivery, and the use of shock-proof, moisture-proof packaging materials carefully packaged and delivered to ensure high-quality delivery of silicon carbide substrates.
1. Q: What is the difference between 4H-P type and 6H type silicon carbide substrate?
A:Compared with 6H, 4H-P SIC substrate has higher electron mobility and better thermal conductivity, which is suitable for manufacturing high performance power devices.
2. Q:What is the effect of axis 0° on the performance of silicon carbide substrate?
A:The setting of the shaft to 0° helps to ensure the consistency and reliability of the device in the subsequent manufacturing process, improving the electrical performance and stability of the device.
Tag: #Sic wafer, #silicon carbide substrate, #4H-P type, #axis 0°, #High purity, #Sic 4H-P type
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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