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12inch Sic wafer silicon carbide 4H-N type production grade dummy grade large size
A 12-inch silicon carbide (SiC) substrate is a large-size substrate material used to manufacture high-performance semiconductor devices. Silicon carbide is a wide bandgap semiconductor material with excellent physical, chemical and electrical properties for high temperature, high frequency and high power applications. The 12-inch (300 mm) substrate is currently at the forefront of silicon carbide technology and represents the semiconductor industry's demand trend for large size, high efficiency and low cost manufacturing.
The manufacturing process of the 12-inch silicon carbide substrate includes steps such as crystal growth, cutting, grinding and polishing. Common crystal growth methods include physical vapor transfer (PVT) and high temperature chemical vapor deposition (HTCVD) to ensure high purity and crystal quality of the material. Through precision machining, 12-inch silicon carbide substrates can meet the stringent requirements of advanced semiconductor devices for surface flatness, defect density and electrical properties.
Due to its excellent performance, 12-inch silicon carbide substrate has a wide range of application prospects in the fields of power electronics, radio frequency communications, new energy vehicles and industrial equipment, and has become one of the key materials to promote the development of next-generation semiconductor technology.
12inch Sic wafer characteristic
Wide band gap characteristics:Silicon carbide has a band gap of 3.26 eV (4H-SiC), which is much higher than silicon (1.12 eV), enabling it to operate stably in high temperature, high frequency and high voltage environments.
High thermal conductivity:The thermal conductivity of silicon carbide is as high as 4.9W /cm·K, which is more than 3 times that of silicon, and it can effectively dissipate heat and is suitable for the manufacture of high power density devices.
High breakdown electric field strength:The breakdown electric field strength of silicon carbide is 2.8 MV/cm, which is 10 times that of silicon, making it able to withstand higher voltages and suitable for high-voltage devices.
High electron saturation drift velocity:Silicon carbide has electron saturation drift speeds of up to 2.0×10^7 cm/s, making it excellent in high-frequency applications and suitable for RF and microwave devices.
Excellent chemical stability:Silicon carbide has strong corrosion resistance to most acids, bases and solvents, and can maintain stable performance in harsh environments.
Large size and high uniformity:The 12-inch silicon carbide substrate has a larger surface area and higher crystal quality uniformity, which can improve the efficiency and yield of device manufacturing and reduce production costs.
Low defect density:Through advanced crystal growth and processing technologies, the defect density of 12-inch silicon carbide substrates is significantly reduced to meet the manufacturing needs of high-performance devices.
12inch Sic wafer Parameter
Diameter
300.0 mm+0mm/-0.5mm
Surface Orientation
4°toward<11-20>±0.5°
Primary Flat Length
Notch
Secondary Flat Length
None
Notch Orientation
<1-100>±1°
Notch Angle
90°+5/-1°
Notch Depth
1mm+0.25mm/-0mm
Orthogonal Misorientation
±5.0°
Surface Finish
C-Face:Optical Polish,Si-Face:CMP
Wafer Edge
Beveling
Surface Roughness(10μm×10μm)
Si-Face:Ra≤0.2 nm C-Face:Ra≤0.5 nm
Thickness
500.0μm±25.0μm
LTV(10mmx10mm)
≤3μm
TTV
≤10μm
BOW
≤25μm
Warp
≤40μm
Surface Parameters
Chips/Indents
None permitted≥0.5mm Width and Depth
Scratches²(Si face CS8520)
≤5 and Cumulative Length≤1 Wafer Diameter
TUA²(2mm*2mm)
≥95%
Cracks
None Permitted
Stain
None Permitted
Edge Exclusion
3mm
12inch Sic wafer applications
Power electronic device:12-inch silicon carbide substrates are widely used in the manufacture of high-voltage, high-power power electronic devices such as MOSFETs (metal oxide semiconductor field-effect transistors), IGBTs (insulated gate bipolar transistors) and Schottky diodes. These devices have important applications in new energy vehicles, industrial motors and renewable energy systems.
Radio frequency and microwave devices:Silicon carbide's high electron saturation drift speed and excellent thermal properties make it an ideal material for manufacturing RF and microwave devices, which are widely used in 5G communications, radar and satellite communications.
New energy vehicle:In new energy vehicles, 12-inch silicon carbide substrates are used to manufacture key components such as motor controllers, on-board chargers and DC-DC converters to improve vehicle energy efficiency and endurance.
Industrial equipment:In the industrial sector, silicon carbide substrates are used to manufacture power modules, inverters and inverters with high power density and reliability to meet the needs of industrial automation and intelligent manufacturing.
Renewable energy:In solar inverters and wind power systems, silicon carbide devices can significantly improve energy conversion efficiency, reduce system losses, and promote the development of renewable energy technology.
Aerospace and Defense:The high temperature, high frequency and high power characteristics of SIC substrates make them important applications in the aerospace and defense fields, such as radar systems, communications equipment and power management systems.
Consumer electronics:In the consumer electronics sector, silicon carbide substrates are used to manufacture efficient and compact power adapters and fast charging devices to meet consumer demand for high-performance electronic products.
12inch Sic wafer display
12 "silicon carbide substrate with its wide band gap characteristics, high thermal conductivity, high breakdown electric field strength and high electron saturation drift speed and other excellent properties.
FAQ
1. Q: What is SiC substrate?
A: SiC substrate is a substrate made of silicon carbide (SiC) single crystal material, which has the characteristics of wide band gap, high thermal conductivity and high breakdown voltage, and is widely used in the manufacture of high-performance semiconductor devices.
2. Q: How many chips are on a 12 inch wafer?
A: As a rough estimate, a 300mm wafer with a diameter of about 12 inches can typically yield around 300-400 chips, depending on the size of the die and the amount of space between them.
Tag: #12inch SiC substrate, #Sic wafer, #Silicon carbide, #High purity, #12inch wafer, #4H-N type, #Large size, #12 inch Sic semiconductor material
Company Details
Bronze Gleitlager
,
Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
