Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 9000pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB |
Gate-to-Source Voltage | ±30 V |
Pulsed Drain Current | 180 A |
Repetitive Peak Current | 91 A |
Linear Derating Factor | 2.2 W/°C |
Operating Junction and Storage Temperature | -40 to + 175°C |
Soldering Temperature for 10 seconds | 300°C |
Brand Name | |
Model Number | IRFB4229PBF |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 9000pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB | Gate-to-Source Voltage | ±30 V |
Pulsed Drain Current | 180 A | Repetitive Peak Current | 91 A |
Linear Derating Factor | 2.2 W/°C | Operating Junction and Storage Temperature | -40 to + 175°C |
Soldering Temperature for 10 seconds | 300°C | Brand Name | |
Model Number | IRFB4229PBF | Certification | new & original |
Place of Origin | original factory | ||
High Light | power mosfet ic ,silicon power transistors |
PDP SWITCH IRFB4229PbF
Features
• Advanced Process Technology
• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
Energy Recovery and Pass Switch Applications
• Low QG for Fast Response
• High Repetitive Peak Current Capability for Reliable Operation
• Short Fall & Rise Times for Fast Switching
• 175°C Operating Junction Temperature for Improved Ruggedness
• Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters
VDS min | 250 | V |
VDS (Avalanche) typ. | 300 | V |
RDS(ON) typ. @ 10V | 38 | mΩ |
IRP max @ TC= 100°C | 91 | A |
TJ max | 175 | °C |
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter | Max. | Units | |
---|---|---|---|
VGS | Gate-to-Source Voltage | ±30 | V |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 46 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 33 | A |
IDM | Pulsed Drain Current | 180 | A |
IRP @ TC = 100°C | Repetitive Peak Current | 91 | A |
PD @TC = 25°C | Power Dissipation | 330 | W |
PD @TC = 100°C | Power Dissipation | 190 | W |
Linear Derating Factor | 2.2 | W/°C | |
TJ TSTG | Operating Junction and Storage Temperature Range | -40 to + 175 | °C |
Soldering Temperature for 10 seconds | 300 | °C | |
Mounting Torque, 6-32 or M3 Screw | 10lbin (1.1Nm) | N |
Stock Offer (Hot Sell)
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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