Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 9000pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB |
Pulsed Drain Current | 330 A |
Power Dissipation | 200 W |
Linear Derating Factor | 1.4 W/°C |
Gate-to-Source Voltage | ± 20 V |
Avalanche Current | 50 A |
Repetitive Avalanche Energy | 17 mJ |
Brand Name | |
Model Number | IRF1010EPBF |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 9000pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB | Pulsed Drain Current | 330 A |
Power Dissipation | 200 W | Linear Derating Factor | 1.4 W/°C |
Gate-to-Source Voltage | ± 20 V | Avalanche Current | 50 A |
Repetitive Avalanche Energy | 17 mJ | Brand Name | |
Model Number | IRF1010EPBF | Certification | new & original |
Place of Origin | original factory | ||
High Light | multi emitter transistor ,silicon power transistors |
IRF1010EPbF
HEXFET® Power MOSFET
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter | Max. | Unit | |
---|---|---|---|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 84 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 59 | A |
IDM | Pulsed Drain Current | 330 | A |
PD @TC = 25°C | Power Dissipation | 200 | W |
Linear Derating Factor | 1.4 | W/°C | |
VGS | Gate-to-Source Voltage | ± 20 | V |
IAR | Avalanche Current | 50 | A |
EAR | Repetitive Avalanche Energy | 17 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.0 | V/ns |
TJ TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Stock Offer (Hot Sell)
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IMZ2A | 3887 | ROHM | 16+ | SOT-163 |
EPCS4SI8N | 3888 | ALTERA | 14+ | SOP-8 |
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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