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ChongMing Group (HK) Int'l Co., Ltd

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China SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology
China SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

  1. China SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8300pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description IGBT NPT 1200 V 6.2 A 62 W Through Hole PG-TO220-3-1
Collector-emitter voltage 1200 V
DC collector current 6.2 A
Pulsed collector current 9.6 A
Gate-emitter voltage ±20 V
Power dissipation 62 W
Operating junction and storage temperature -55...+150°C
Brand Name
Model Number SGP02N120
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8300pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description IGBT NPT 1200 V 6.2 A 62 W Through Hole PG-TO220-3-1 Collector-emitter voltage 1200 V
DC collector current 6.2 A Pulsed collector current 9.6 A
Gate-emitter voltage ±20 V Power dissipation 62 W
Operating junction and storage temperature -55...+150°C Brand Name
Model Number SGP02N120 Certification new & original
Place of Origin original factory
High Light power mosfet icmulti emitter transistor

 

SGP02N120, SGB02N120, SGD02N120

 

Fast S-IGBT in NPT-technology

 

 

• 40% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

  - Motor controls

  - Inverter

  - SMPS

• NPT-Technology offers:

  - very tight parameter distribution

  - high ruggedness, temperature stable behaviour

  - parallel switching capability

 

 

 

Maximum Ratings

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V

DC collector current

TC = 25°C

TC = 100°C

IC

 

6.2

2.8

A
Pulsed collector current, tp limited by Tjmax ICpuls 9.6 A
Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C   9.6 A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C EAS 10 mJ
Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs
Power dissipation TC = 25°C Ptot 62 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s   260 °C

 

 

 

 

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Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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