DC:22+
MOQ:1pc
Package: Standard
The range of functional chips is broad and covers many different application areas, such as communications, image processing, sensor control, audio processing, energy management, and more.
ShenZhen QingFengYuan Technology Co.,Ltd.
| Type | Pentode Transistor, ic chips |
| Operating Temperature | -, -55°C ~ 150°C (TJ) |
| Mounting Type | -, Surface Mount, Through Hole |
| Description | Transistors |
| D/C | - |
| Package Type | Throught Hole |
| Application | Electronic |
| Supplier Type | Original manufacturer, ODM, Agency, Retailer |
| Media Available | datasheet, Photo |
| Brand | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Package / Case | -, TO-252-3 |
| Resistor - Base (R1) | - |
| Resistor - Emitter Base (R2) | - |
| FET Type | -, N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | -, 700V, 200V |
| Current - Continuous Drain (Id) @ 25°C | -, 8.5A (Tc), 65A (Tc) |
| Rds On (Max) @ Id, Vgs | -, 600mOhm @ 1.8A, 10V, 24 mOhm @ 46A, 10V |
| Vgs(th) (Max) @ Id | -, 5V @ 250uA |
| Gate Charge (Qg) (Max) @ Vgs | -, 10.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | -, 364pF @ 400V |
| Frequency | - |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Power - Output | - |
| Voltage - Rated | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| IGBT Type | - |
| Configuration | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Input Capacitance (Cies) @ Vce | - |
| Input | - |
| NTC Thermistor | - |
| Voltage - Breakdown (V(BR)GSS) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | - |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - |
| Resistance - RDS(On) | - |
| Voltage | - |
| Voltage - Output | - |
| Voltage - Offset (Vt) | - |
| Current - Gate to Anode Leakage (Igao) | - |
| Current - Valley (Iv) | - |
| Current - Peak | - |
| Applications | - |
| Transistor Type | mrf150 rf power transistor |
| Part Number | IRFB4227PBF |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Supplier Device Package | TO-220AB |
| Packaging Details | Standard package |
| Port | Shenzhen |
| Supply Ability | 225867 Piece/Pieces per Day |
| Model Number | IRFB4227PBF |
| Place of Origin | Guangdong, China |
| Brand Name | Original Brand |
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Product Specification
| Type | Pentode Transistor, ic chips | Operating Temperature | -, -55°C ~ 150°C (TJ) |
| Mounting Type | -, Surface Mount, Through Hole | Description | Transistors |
| D/C | - | Package Type | Throught Hole |
| Application | Electronic | Supplier Type | Original manufacturer, ODM, Agency, Retailer |
| Media Available | datasheet, Photo | Brand | - |
| Current - Collector (Ic) (Max) | - | Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - | Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | Power - Max | - |
| Frequency - Transition | - | Package / Case | -, TO-252-3 |
| Resistor - Base (R1) | - | Resistor - Emitter Base (R2) | - |
| FET Type | -, N-Channel | FET Feature | - |
| Drain to Source Voltage (Vdss) | -, 700V, 200V | Current - Continuous Drain (Id) @ 25°C | -, 8.5A (Tc), 65A (Tc) |
| Rds On (Max) @ Id, Vgs | -, 600mOhm @ 1.8A, 10V, 24 mOhm @ 46A, 10V | Vgs(th) (Max) @ Id | -, 5V @ 250uA |
| Gate Charge (Qg) (Max) @ Vgs | -, 10.5nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | -, 364pF @ 400V |
| Frequency | - | Current Rating (Amps) | - |
| Noise Figure | - | Power - Output | - |
| Voltage - Rated | - | Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - | IGBT Type | - |
| Configuration | - | Vce(on) (Max) @ Vge, Ic | - |
| Input Capacitance (Cies) @ Vce | - | Input | - |
| NTC Thermistor | - | Voltage - Breakdown (V(BR)GSS) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | - | Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - | Resistance - RDS(On) | - |
| Voltage | - | Voltage - Output | - |
| Voltage - Offset (Vt) | - | Current - Gate to Anode Leakage (Igao) | - |
| Current - Valley (Iv) | - | Current - Peak | - |
| Applications | - | Transistor Type | mrf150 rf power transistor |
| Part Number | IRFB4227PBF | Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Supplier Device Package | TO-220AB |
| Packaging Details | Standard package | Port | Shenzhen |
| Supply Ability | 225867 Piece/Pieces per Day | Model Number | IRFB4227PBF |
| Place of Origin | Guangdong, China | Brand Name | Original Brand |
Chips type we have | ||||||
Integrated circuits Electronic componentss | Comparator ICs | Encoder-Decoder | Touch ICs | |||
Voltage Reference ICs | Amplifier | Reset Detector IC | Power Amplifier IC | |||
Infrared Processing IC | Interface Chip | Bluetooth Chip | Boost and Buck Chips | |||
Time base chips | Clock Communication Chips | Transceiver IC | Wireless RF IC | |||
Chip Resistor | Storage Chip 2 | Ethernet Chip | Integrated circuits Electronic components | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent
Year Established:
2015
Total Annual:
1000000-80000000
Employee Number:
50~100
Ecer Certification：
Verified Supplier
Shenzhen QFY Technology Co., Ltd. We are a highly reputable company specializing in providing comprehensive electronic component solutions. With our one-stop BOM (Bill of Materials) service and sales of various ele... Shenzhen QFY Technology Co., Ltd. We are a highly reputable company specializing in providing comprehensive electronic component solutions. With our one-stop BOM (Bill of Materials) service and sales of various ele...
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