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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor
China AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

  1. China AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-Source Voltage -30 V
Gate-Source Voltage ±25 V
Continuous Drain Current -20 A
Pulsed Drain Current -80 A
Junction and Storage Temperature -55 to 150°C
Package 8-DFN
Brand Name Anterwell
Model Number AON7403
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-Source Voltage -30 V Gate-Source Voltage ±25 V
Continuous Drain Current -20 A Pulsed Drain Current -80 A
Junction and Storage Temperature -55 to 150°C Package 8-DFN
Brand Name Anterwell Model Number AON7403
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

AON7403 P-Channel Enhancement Mode Field Effect Transistor

 

General Description

The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical.

-RoHS Compliant

-AON7403L is Halogen Free

 

Features

VDS (V) = -30V

ID = -8A (VGS = -10V)

RDS(ON) < 18mΩ (VGS = -10V)

RDS(ON) < 36mΩ (VGS = -4.5V)

 

 

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current B,G TC=25°C ID -20 A
TC=100°C -20
Pulsed Drain Current C IDM -80
Continuous Drain Current TA=25°C IDSM -8
TA=70°C -6
Power Dissipation B TC=25°C PD 27 W
TC=100°C 11
Power Dissipation A TA=25°C PDSM 1.6
TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

G. The maximum current rating is limited by bond-wires.

 

 

 

 

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Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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