Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8000pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Drain-Source Voltage | -30 V |
Gate-Source Voltage | ±25 V |
Continuous Drain Current | -20 A |
Pulsed Drain Current | -80 A |
Junction and Storage Temperature | -55 to 150°C |
Package | 8-DFN |
Brand Name | Anterwell |
Model Number | AON7403 |
Certification | new & original |
Place of Origin | original factory |
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8000pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Drain-Source Voltage | -30 V | Gate-Source Voltage | ±25 V |
Continuous Drain Current | -20 A | Pulsed Drain Current | -80 A |
Junction and Storage Temperature | -55 to 150°C | Package | 8-DFN |
Brand Name | Anterwell | Model Number | AON7403 |
Certification | new & original | Place of Origin | original factory |
High Light | multi emitter transistor ,silicon power transistors |
AON7403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical.
-RoHS Compliant
-AON7403L is Halogen Free
Features
VDS (V) = -30V
ID = -8A (VGS = -10V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter | Symbol | Maximum | Units | |
---|---|---|---|---|
Drain-Source Voltage | VDS | -30 | V | |
Gate-Source Voltage | VGS | ±25 | V | |
Continuous Drain Current B,G | TC=25°C | ID | -20 | A |
TC=100°C | -20 | |||
Pulsed Drain Current C | IDM | -80 | ||
Continuous Drain Current | TA=25°C | IDSM | -8 | |
TA=70°C | -6 | |||
Power Dissipation B | TC=25°C | PD | 27 | W |
TC=100°C | 11 | |||
Power Dissipation A | TA=25°C | PDSM | 1.6 | |
TA=70°C | 1 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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