Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 7600pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Drain-Source Voltage | 20 V |
Gate-Source Voltage | ±12 V |
Pulsed Drain Current | 26 A |
Continuous Source Current | 2.5 A |
Single Pulse Avalanche Energy | 100 mJ |
Avalanche Current | 4.1 A |
Brand Name | Anterwell |
Model Number | IRF7311TRPBF |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 7600pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Drain-Source Voltage | 20 V | Gate-Source Voltage | ±12 V |
Pulsed Drain Current | 26 A | Continuous Source Current | 2.5 A |
Single Pulse Avalanche Energy | 100 mJ | Avalanche Current | 4.1 A |
Brand Name | Anterwell | Model Number | IRF7311TRPBF |
Certification | new & original | Place of Origin | original factory |
High Light | electronic integrated circuit ,linear integrated circuits |
IRF7311
HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol | Maximum | Units | ||
Drain-Source Voltage | VDS | 20 | V | |
Gate-Source Voltage | VGS | ±12 | V | |
Continuous Drain Current 1 | TA = 25°C | ID | 6.6 | A |
TA = 70°C | 5.3 | |||
Pulsed Drain Current | IDM | 26 | A | |
Continuous Source Current (Diode Conduction) | IS | 2.5 | A | |
Maximum Power Dissipation 1 | TA = 25°C | PD | 2.0 | W |
TA = 70°C | 1.3 | |||
Single Pulse Avalanche Energy 2 | EAS | 100 | mJ | |
Avalanche Current | IAR | 4.1 | A | |
Repetitive Avalanche Energy | EAR | 0.20 | mJ | |
Peak Diode Recovery dv/dt 3 | dv/dt | 5.0 | V/ ns | |
Junction and Storage Temperature Range | TJ, TSTG | -55 to + 150 | °C |
Notes:
1. Surface mounted on 1 in square Cu board
2. Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A.
3. ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Stock Offer (Hot Sell)
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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