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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200
China NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

  1. China NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Collector-Base Voltage 230 V
Collector-Emitter Voltage 230 V
Emitter-Base Voltage 5 V
Collector Current(DC) 15 A
Base Current 1.5 A
Junction and Storage Temperature - 50 ~ +150 °C
Brand Name Anterwell
Model Number 2SC5200
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 10000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Collector-Base Voltage 230 V Collector-Emitter Voltage 230 V
Emitter-Base Voltage 5 V Collector Current(DC) 15 A
Base Current 1.5 A Junction and Storage Temperature - 50 ~ +150 °C
Brand Name Anterwell Model Number 2SC5200
Certification new & original Place of Origin original factory
High Light npn smd transistormulti emitter transistor

 

2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

 

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

 

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

  -- TO3P package, 2SC5242/FJA4313 : 130 watts

  -- TO220 package, FJP5200 : 80 watts

  -- TO220F package, FJPF5200 : 50 watts

 

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

  Symbol             Parameter      Ratings       Units
  BVCBO   Collector-Base Voltage     230         V
  BVCEO   Collector-Emitter Voltage     230         V
  BVEBO   Emitter-Base Voltage       5         V
   IC   Collector Current(DC)      15         A
   IB   Base Current      1.5         A
   PD

  Total Device Dissipation(TC=25°C)

  Derate above 25°C

     150

     1.04

        W

      W/°C

  TJ, TSTG   Junction and Storage Temperature     - 50 ~ +150         °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

 

Thermal Characteristics* Ta=25°C unless otherwise noted   

  Symbol             Parameter      Max      Units
   RθJC   Thermal Resistance, Junction to Case      0.83      °C/W

* Device mounted on minimum pad size

 

hFE Classification

   Classification            R             O
      hFE1       55 ~ 110        80 ~ 160

 

 

Typical Characteristics

 

Package Dimensions

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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