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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect
China NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect

  1. China NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect

NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect

  1. MOQ: 20
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 20000
Delivery Time 1
Packaging Details please contact me for details
Drain-Source Voltage -30 V
Gate-Source Voltage - Continuous ±20 V
Maximum Drain Current - Continuous ( ±1.1 A
Maximum Power Dissipation 0.5 W
Operating and Storage Temperature Range -55 to 150 °C
Brand Name FAIRCHILD
Model Number NDS356AP
Certification Original Factory Pack
Place of Origin Philippines

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 20000
Delivery Time 1 Packaging Details please contact me for details
Drain-Source Voltage -30 V Gate-Source Voltage - Continuous ±20 V
Maximum Drain Current - Continuous ( ±1.1 A Maximum Power Dissipation 0.5 W
Operating and Storage Temperature Range -55 to 150 °C Brand Name FAIRCHILD
Model Number NDS356AP Certification Original Factory Pack
Place of Origin Philippines
High Light power mosfet icmulti emitter transistor

NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor


General Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

 

Features

►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V

                      RDS(ON) = 0.2 W @ VGS=-10 V.

►Industry standard outline SOT-23 surface mount package

using proprietary SuperSOTTM-3 design for superior thermal

and electrical capabilities.

►High density cell design for extremely low RDS(ON).

►Exceptional on-resistance and maximum DC current capability.

 

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol  Parameter  NDS356AP Units
VDSS  Drain-Source Voltage -30  V
VGSS  Gate-Source Voltage - Continuous  ±20  V
ID Maximum Drain Current - Continuous ±1.1  A
PD Maximum Power Dissipation 0.5  W
TJ ,TSTG Operating and Storage Temperature Range -55 to 150  °C

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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