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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V
China IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

  1. China IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

  1. MOQ: 20pcs
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 Day
Packaging Details please contact me for details
VDS 200 V
RDS(ON) typ. @ 10V 80 m
Qg typ. 19 nC
Qsw typ 6.8 nC
RG(int) typ. 3.0 Ω
Brand Name IRF
Model Number IRFI4020H-117P
Certification Original Factory Pack
Place of Origin Original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,PayPal Supply Ability 5200PCS
Delivery Time 1 Day Packaging Details please contact me for details
VDS 200 V RDS(ON) typ. @ 10V 80 m
Qg typ. 19 nC Qsw typ 6.8 nC
RG(int) typ. 3.0 Ω Brand Name IRF
Model Number IRFI4020H-117P Certification Original Factory Pack
Place of Origin Original
High Light npn smd transistormulti emitter transistor

Features

► Integrated half-bridge package 

► Reduces the part count by half 

► Facilitates better PCB layout 

► Key parameters optimized for Class-D audio amplifier applications 

► Low RDS(ON) for improved efficiency 

► Low Qg and Qsw for better THD and improved efficiency  Low Qrr for better THD and lower EMI 

► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier 

► Lead-free package

 

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

 

  Parameter   Max Units
VDS  Drain-to-Source Voltage 200  V
VGS Gate-to-Source Voltage ±20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.1

A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A

 

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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