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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China STRG6653 Power Mosfet Transistor OFF - LINE QUASI - RESONANT FLYBACK SWITCHING
China STRG6653 Power Mosfet Transistor OFF - LINE QUASI - RESONANT FLYBACK SWITCHING

  1. China STRG6653 Power Mosfet Transistor OFF - LINE QUASI - RESONANT FLYBACK SWITCHING

STRG6653 Power Mosfet Transistor OFF - LINE QUASI - RESONANT FLYBACK SWITCHING

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 7600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Control Supply Voltage 35 V
Drain-Source Voltage 650 V
Drain Current(continuous) 2.7 A
Over-Current Protection Voltage Range -0.3 V to +6 V
Insulation RMS Voltage 2000 V
Storage Temperature Range -40°C to +125°C
Internal Frame Temperature +125°C
Operating Temperature Range -20°C to +125°C
Brand Name Anterwell
Model Number STRG6653
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 7600pcs
Delivery Time 1 day Packaging Details Please contact me for details
Control Supply Voltage 35 V Drain-Source Voltage 650 V
Drain Current(continuous) 2.7 A Over-Current Protection Voltage Range -0.3 V to +6 V
Insulation RMS Voltage 2000 V Storage Temperature Range -40°C to +125°C
Internal Frame Temperature +125°C Operating Temperature Range -20°C to +125°C
Brand Name Anterwell Model Number STRG6653
Certification new & original Place of Origin original factory
High Light npn smd transistormulti emitter transistor

 

STR-G6651

OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR

 

The STR-G6651 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. This device incorporates the primary control and drive circuit with a discrete avalanche-rated power MOSFET.

Cycle-by-cycle current limiting, under-voltage lockout with hysteresis, over-voltage protection, and thermal shutdown protects the power supply during the normal overload and fault conditions. Over-voltage protection and thermal shutdown are latched after a short delay. The latch may be reset by cycling the input supply. Low-current startup and a low-power standby mode selected from the secondary circuit completes a comprehensive suite of features. The device is provided in a five-pin over-molded TO-220 style package, affording dielectric isolation without compromising thermal characteristics. Two lead forms are available (with and without the suffix ‘-LF’) to accommodate printed wiring board layout or mechanical constraints.

Proven in substantial volumes, the STR-G6651 is a robust low-risk solution for off-line power supplies particularly where management of EMI at the source is a significant element of the system design.

 

FEATURES

■ Quasi-Resonant Operation

■ Output Power to 66 W

■ Low-Loss, Pulse-Ratio-Control Standby Mode

■ Temperature-Compensated Pulse-by-Pulse Over-Current Protection

■ Latched Over-Voltage and Thermal Protection

■ Under-Voltage Lockout with Hysteresis

■ Active Low-Pass Filter for Enhanced Light-Load Stability

■ Switched Attenuation of Leading-Edge Current-Sensing Signal

■ Regulated Soft Gate Drive

■ Adjustable Switching Speed for EMI Control

■ Overmolded Five-Pin Package

 

ABSOLUTE MAXIMUM RATINGS at TA = +25°C

Control Supply Voltage, VIN . . . . . . . 35 V

Drain-Source Voltage, VDS . . . . . . . . 650 V

Drain Current, ID

    continuous . . . . . . . . . . . . . . . . . . 2.7 A

    single-pulse, tw ≤ 1 ms . . . . . . . . 7.2 A

Avalanche Energy, EAS

    single-pulse . . . . . . . . . . . . . . . 158 mJ

Over-Current Protection Voltage Range,

    VOCP . . . . . . . . . . . . . . . -0.3 V to +6 V

Insulation RMS Voltage,

    VWM(RMS) . . . . . . . . . . . . . . . . . . 2000 V

Package Power Dissipation, PD

    control (VIN x IIN(ON)) . . . . . . . . . 0.8 W

    total . . . . . . . . . . . . . . . . . . . See Graph

FET Channel Temperature, TJ . . . +150°C

Internal Frame Temperature, TF . . +125°C

Operating Temperature Range,

    TA . . . . . . . . . . . . . . . -20°C to +125°C

Storage Temperature Range,

    TS . . . . . . . . . . . . . . . -40°C to +125°C

 

 

FUNCTIONAL BLOCK DIAGRAM

 

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Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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