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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell
China Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

  1. China Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

  1. MOQ: 20
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8000
Delivery Time 1 day
Packaging Details Please contact me for details
Package TO-3PN
Applications Audio ,regulator and general purpose
Brand Name Anterwell
Model Number 2SB1560
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8000
Delivery Time 1 day Packaging Details Please contact me for details
Package TO-3PN Applications Audio ,regulator and general purpose
Brand Name Anterwell Model Number 2SB1560
Certification new & original Place of Origin original factory
High Light npn smd transistormulti emitter transistor

Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell
 
Darlington 2SB1560

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)

 

 
 

PINNING

    PIN      DESCRIPTION
      1     Base
      2  Collector;connected to          mounting base
      3     Emitter

 
 
 
 
 
 
 
 
 

Absolute maximum ratings(Ta=℃)

 SYMBOL         PARAMETER CONDITIONS   VALUE   UNIT
  VCBO    Collector-base voltageOpen emitter  -160   V
  VCEO     Collector-emitter voltageOpen base  -150   V
  VEBO    Emitter-base voltageOpen collector  -5   V
  IC    Collector current   -10   A
  IB    Base current   1   A
  PC     Collector power dissipationTC=25℃  100   W
  Tj     Junction temperature   150   ℃
  Tstg     Storage temperature   -55~150   ℃

 
 

CHARACTERISTICS Tj=25℃ (unless otherwise specified)

SYMBOL           PARAMETER       CONDITIONS  MIN TYP.   MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0  -150    V
  VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA    -2.5  V
  VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA    -3.0  V
  ICBO Collector cut-off current VCB=-160V; IE=0    -100  μA
  IEBO Emitter cut-off current VEB=-5V; IC=0    -100  μA
  hFE DC current gain IC=-7A ; VCE=-4V  5000   
  Cob Output capacitance IE=0 ; VCB=10V;f=1MHz   230   pF
   fT Transition frequency IC=-2A ; VCE=-12V   50   MHz
Switching times
   ton   Turn-on time

 IC=-7A;RL=10Ω
 IB1=- IB2=-7mA
 VCC=-70V

   0.8   μs
   ts   Storage time   3.0   μs
   tf    Fall time   1.2   μs

 

‹ hFE Classifications

                          O                     P                     Y
                  5000-12000              6500-20000            15000-30000

 
 
PACKAGE OUTLINE

 

 
 
 
 
 
























Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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